- 您现在的位置：买卖IC网 > PDF目录20422 > IR21381QPBF (International Rectifier)IC CTLR AC MOTOR 3PHASE 64-MQFP PDF资料下载
参数资料
| 型号： | IR21381QPBF |
| 厂商： | International Rectifier |
| 文件页数： | 26/30页 |
| 文件大小： | 0K |
| 描述： | IC CTLR AC MOTOR 3PHASE 64-MQFP |
| 标准包装： | 660 |
| 配置： | 3 相桥 |
| 输入类型： | 反相和非反相 |
| 延迟时间： | 550ns |
| 电流 - 峰： | 350mA |
| 配置数： | 1 |
| 输出数： | 3 |
| 高端电压 - 最大（自引导启动）： | 600V |
| 电源电压： | 12.5 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 64-MQFP，64-PQFP |
| 供应商设备封装： | 64-MQFP（20x14） |
| 包装： | 带卷 (TR) |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页当前第26页第27页第28页第29页第30页
IR22381Q PBF /IR21381Q ( P b F )
Sizing the turn-off gate resistor
The worst case in sizing the turn-off resistor R Goff is
when the collector of the IGBT in off state is forced
to commutate by external events (i.e. the turn-on of
As a result, when τ is faster than the collector rise
time (to be verified after calculation) the transfer
function can be approximated by:
= s ? ( R Goff + R DRn ) ? C RESoff
So that V ge = ( R Goff + R DRn ) ? C RESoff ?
V th > V ge = ( R Goff + R DRn ) ? C RESoff
the companion IGBT).
In this case the dV/dt of the output node induces a
parasitic current through C RESoff flowing in R Goff and
R DRn (see Figure 26).
If the voltage drop at the gate exceeds the threshold
voltage of the IGBT, the device may self turn on
causing large oscillation and relevant cross
conduction.
V ge
V de
time domain.
Then the condition:
dV de
dt
dV out
dt
in the
HS Turning ON
C RESoff
dV/dt
must be verified to avoid spurious turn on.
Rearranging the equation yields:
ON
R DRn
R Goff
C IES
OFF
(1)
R Goff <
V th
C RESoff
?
dV
dt
? R DRn
In any case, the worst condition for a spurious turn
Figure 26: R Goff sizing: current path when Low
Side is off and High Side turns on
on is with very fast steps on IGBT collector.
In that case collector to gate transfer function can
be approximated with the capacitor divider:
The transfer function between IGBT collector and
IGBT gate then becomes:
V ge = V de ?
C RESoff
( C RESoff + C IES )
V ge
V de
=
s ? ( R Goff + R DRn ) ? C RESoff
1 + s ? ( R Goff + R DRn ) ? ( C RESoff + C IES )
which is driven only by IGBT characteristics.
As an example, table 3 reports R Goff (calculated with
the above mentioned equation (1)) for two popular
Which yields to a high pass filter with a pole at:
IGBTs to withstand dV out /dt = 5V/ns .
1 / τ =
( R Goff
1
+ R DRn ) ? ( C RESoff + C IES )
NOTICE: the above-described equations are
intended being an approximated way for the gate
resistances sizing. More accurate sizing may
account more precise device modelling and
parasitic component dependent on the PCB and
power section layout and related connections.
Table 1: R Gon sizing driven by t sw constraint
IGBT
GB15XP120K*
GB05XP120K
IRGB5B120KD
Qge
12nC
3.7nC
3.7nC
Qgc
46nC
14nC
13nC
Vge*
9V
9.5V
9.5V
tsw
500ns
400ns
500ns
Iavg
116mA
44mA
33mA
Rtot
77 ?
124 ?
164 ?
RGon → std commercial value
Rtot - RDRp = 15 ? → 10 ?
Rtot - RDRp = 65 ? → 68 ?
Rtot - RDRp = 102 ? → 100 ?
Tsw
→ 465ns
→ 408ns
→ 502ns
Table 2: Table 2: RGon sizing driven by dVOUT/dt constraint
IGBT
GB15XP120K*
GB05XP120K
IRGB120KD
Qge
12nC
3.7nC
3.7nc
Qgc
46nC
14nC
13nC
Vge*
9V
9.5V
9.5V
CRESoff
38pF
12pF
11pF
Rtot
47 ?
91 ?
100 ?
RGon → std commercial value
Rtot - RDRp = 4.5 ? → 4.7 ?
Rtot - RDRp = 48.8 ? → 47 ?
Rtot - RDRp = 57 ? → 56 ?
dVout/dt
→ 5V/ns
→ 5.1V/ns
→ 5V/ns
26
相关PDF资料 |
PDF描述 |
|---|---|
| AT25128AW-10SU-1.8 | IC EEPROM 128KBIT 20MHZ 8SOIC |
| R1S12-243.3/H | CONV DC/DC 1W 24VIN 3.3VOUT |
| GBM12DTKT-S288 | CONN EDGECARD 24POS .156 EXTEND |
| T95D227M010ESSS | CAP TANT 220UF 10V 20% 2917 |
| AT24C64BN-10SU-1.8 | IC EEPROM 64KBIT 400KHZ 8SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IR2138QPBF | 功能描述:马达/运动/点火控制器和驱动器 600V 3Phs IGBT Drvr For AC Mtr Drv Apps RoHS:否 制造商:STMicroelectronics 产品:Stepper Motor Controllers / Drivers 类型:2 Phase Stepper Motor Driver 工作电源电压:8 V to 45 V 电源电流:0.5 mA 工作温度:- 25 C to + 125 C 安装风格:SMD/SMT 封装 / 箱体:HTSSOP-28 封装:Tube |
| IR2151 | 功能描述:IC DRVR HALF BRDG SELF-OSC 8-DIP RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:高端 输入类型:非反相 延迟时间:200ns 电流 - 峰:250mA 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:600V 电源电压:12 V ~ 20 V 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:8-DIP（0.300"，7.62mm） 供应商设备封装:8-DIP 包装:管件 其它名称:*IR2127 |
| IR2151PBF | 功能描述:功率驱动器IC RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IR2151S | 功能描述:IC DRVR HALF BRDG SELF-OSC 8SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:50 系列:- 配置:低端 输入类型:非反相 延迟时间:40ns 电流 - 峰:9A 配置数:1 输出数:1 高端电压 - 最大（自引导启动）:- 电源电压:4.5 V ~ 35 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:TO-263-6，D²Pak（5 引线+接片），TO-263BA 供应商设备封装:TO-263 包装:管件 |
| IR2151SPBF | 功能描述:功率驱动器IC HALF BRDG DRVR 600V 100mA 1.2us RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。