参数资料
| 型号： | IR3505MPBF |
| 厂商： | International Rectifier |
| 文件页数： | 15/19页 |
| 文件大小： | 0K |
| 描述： | IC XPHASE3 CONTROL 16-MLPQ |
| 标准包装： | 100 |
| 系列： | XPhase3™ |
| 应用： | 处理器 |
| 电流 - 电源： | 3mA |
| 电源电压： | 8 V ~ 16 V |
| 工作温度： | 0°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-MLPQ |
| 供应商设备封装： | 16-MLPQ（3x3） |
| 包装： | 剪切带 (CT) |
IR3505
LAYOUT GUIDELINES
The following layout guidelines are recommended to reduce the parasitic inductance and resistance of the
PCB layout, therefore minimizing the noise coupled to the IC.
? Dedicate at least one middle layer for a ground plane, which is then split into signal ground plane (LGND)
and power ground plane (PGND).
? Separate analog bus (EAIN, DACIN, and ISHARE) from digital bus (CLKIN, PHSIN, and PHSOUT) to
reduce the noise coupling.
? Connect PGND to LGND pins to their respective ground planes through vias.
? Place current sense resistors and capacitors (R CS and C CS ) close to phase IC. Use Kelvin connection for
the inductor current sense wires, but separate the two wires by ground polygon. The wire from the inductor
terminal to CSIN- should not cross over the fast transition nodes, i.e. switching nodes, gate drive outputs
and bootstrap nodes.
? Place the decoupling capacitor C VCCL as close as possible to the VCCL pin.
? Place the phase IC as close as possible to the MOSFETs to reduce the parasitic resistance and
inductance of the gate drive paths.
? Place the input ceramic capacitors close to the drain of top MOSFET and the source of bottom MOSFET.
Use combination of different packages of ceramic capacitors.
? There are two switching power loops. One loop includes the input capacitors, top MOSFET, inductor,
output capacitors and the load; another loop consists of bottom MOSFET, inductor, output capacitors and
the load. Route the switching power paths using wide and short traces or polygons; use multiple vias for
connections between layers.
To Gate
Drive
Voltage
To Digital Bus
To Analog Bus
To VIN
LGND
PLANE
To VIN
PHSOUT
CLKIN
PGND
ISHARE
PHSINLGNDDACIN
R
EAIN
CSIN- -
CSIN+
CS
VCCL
C
GATEL
VCCL BOOST GATEH SW
VCC
VCC
C
C
CS
BST
To Bottom
MOSFET
D
BST
C
To Top
MOSFET
To LGND
Plane
Ground
PGND
Polygon
Sept 26 , 2007
PLANE
Page 15 of 19
To Switching
Node
To Inductor
th
相关PDF资料 |
PDF描述 |
|---|---|
| IR3505ZMTRPBF | IC XPHASE3 CTLR 2.5A 16-MLPQ |
| IR3506MTRPBF | IC CTRL XPHASE3 DDR 16-MLPQ |
| IR3507MTRPBF | IC XPHASE3 CONTROL 20-MLPQ |
| IR3507ZMTRPBF | IC CTRL XPHASE3 20-MLPQ |
| IR3508MTRPBF | IC XPHASE3 CTLR 20-MLPQ |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IR3505MTRPBF | 功能描述:开关变换器、稳压器与控制器 XPHASE3 DDR VTT 7V 2A 3 Wire RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3505Z | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3505ZMPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM PHASE IC |
| IR3505ZMTRPBF | 功能描述:开关变换器、稳压器与控制器 Xphase3 IR3505Z AMD PVID CTRL IC RoHS:否 制造商:Texas Instruments 输出电压:1.2 V to 10 V 输出电流:300 mA 输出功率: 输入电压:3 V to 17 V 开关频率:1 MHz 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:WSON-8 封装:Reel |
| IR3506 | 制造商:IRF 制造商全称:International Rectifier 功能描述:XPHASE3TM DDR & VTT PHASE IC |
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