参数资料
型号: IR3527MTRPBF
厂商: International Rectifier
文件页数: 15/20页
文件大小: 0K
描述: IC CTRL XPHASE3 DUAL 24-MLPQ
标准包装: 3,000
系列: XPhase3™
应用: 处理器
电流 - 电源: 8mA
电源电压: 8 V ~ 28 V
工作温度: 0°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 24-MLPQ
供应商设备封装: 24-MLPQ(4x4)
包装: 带卷 (TR)
temperature will rise at a rate of approximately 30.5 ?& :   JA ).
2   Vccl u Ivccl   , Pvcc Vcc u Ivcc , and Pbst
2 ( Vbst u Ibst ) . Ivccl, Ivcc, and Ibst are the input
IR3527
IC Die Temperature
To ensure proper operation, the IC die should never operate at or above 150°C. For the vast majority of
applications, the IR3527 dual phase IC will not require any type of heat sink to achieve temperatures well
below 150°C. The IR3527 die is housed in a 24 lead MLPQ with exposed pad (Epad) which will provide
excellent thermal conduction. By soldering the Epad to a minimal copper area of 1”x 1”, the internal die
The die temperature can be derived by first calculating the power dissipation of the phase IC. The IC has two
types of conduction losses: quiescent current and driver losses. The quiescent losses are made up of VCC,
VCCL, and boost (V BST ) supplies, while driving the top and bottom FETs contribute to the second loss.
The IC quiescent power losses can be calculated by the following equations:
Pvccl
supplies quiescent currents which are listed in the Electrical Specifications Table. Driver power losses ( P TOP
and P BOT ) are equal to Q G x V G x Fo , where Q G is the FET’s gate charge, V G is the gate voltage, and Fo is the
operational frequency. Both top and bottom FET power losses needs to be calculated and doubled to account
for both internal drivers. Hence, the total phase IC power loss ( P TOTAL ) is: P VCCL + P VCC + P BST + 2(P TOP ) +
2(P BOT ).
The die temperature can now be calculated with the following formula:
T DIE
Where, T A is the ambient temperature and JA
package.
Page 15 of 20
  T JA u P TOTAL     T A ,
is the junction to air thermal impedance of the 24 pin MLPQ
V3.0
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