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参数资料
| 型号： | IRF3205L |
| 厂商： | International Rectifier |
| 文件页数： | 2/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 110A TO-262 |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 110A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 62A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 146nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3247pF @ 25V |
| 功率 - 最大： | 200W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262 |
| 包装： | 管件 |
| 其它名称： | *IRF3205L |
IRF3205S/IRF3205L
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.057 –––
V/°C
Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
––– ––– 8.0 m ?
V GS = 10V, I D = 62A
?
––– 50 ––– R G = 4.5 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0 ––– 4.0 V V DS = V GS , I D = 250μA
44 ––– ––– S V DS = 25V, I D = 62A ?
––– ––– 25 V DS = 55V, V GS = 0V
μA
––– ––– 250 V DS = 44V, V GS = 0V, T J = 150°C
––– ––– 100 V GS = 20V
nA
––– ––– -100 V GS = -20V
––– ––– 146 I D = 62A
––– ––– 35 nC V DS = 44V
––– ––– 54 V GS = 10V, See Fig. 6 and 13
––– 14 ––– V DD = 28V
––– 101 ––– I D = 62A
ns
––– 65 ––– V GS = 10V, See Fig. 10 ?
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
7.5 –––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
E AS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy ?
––– 3247 ––– V GS = 0V
––– 781 ––– V DS = 25V
––– 211 ––– pF ? = 1.0MHz, See Fig. 5
––– 1050 ? 264 ? mJ I AS = 62A, L = 138 μ H
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
integral reverse
I S
I SM
V SD
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ?
Diode Forward Voltage
MOSFET symbol
––– ––– 110
showing the
A
G
––– ––– 390
p-n junction diode.
––– ––– 1.3 V T J = 25°C, I S = 62A, V GS = 0V ?
D
S
t rr
Q rr
t on
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– 69 104 ns T J = 25°C, I F = 62A
––– 143 215 nC di/dt = 100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 138μH
R G = 25 ? , I AS = 62A. (See Figure 12)
? I SD ≤ 62A , di/d t ≤ 207A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 400μs; duty cycle ≤ 2%.
? Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
? This is a typical value at device destruction and represents
operation outside rated limits.
? This is a calculated value limited to T J = 175°C.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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