- 您现在的位置：买卖IC网 > Datasheet目录442 > IRF3610SPBF (International Rectifier)MOSFET N-CH 100V 103A D2PAK Datasheet资料下载
参数资料
| 型号： | IRF3610SPBF |
| 厂商： | International Rectifier |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 103A D2PAK |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 103A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 11.6 毫欧 @ 62A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 150nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 5380pF @ 25V |
| 功率 - 最大： | 333W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D²PAK |
| 包装： | 管件 |
IRF3610SPbF
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance Junction-to-Case
1000
Allowed avalanche Current vs avalanche
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ? Tj = 150°C and
Tstart =25°C (Single Pulse)
1
0.1
pulsewidth, tav, assuming ?Τ j = 25°C and
Tstart = 150°C.
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse Width
500
400
300
200
100
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 62A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T jmax . This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I av = Allowable avalanche current.
7. ? T = Allowable rise in junction temperature, not to exceed T jmax (assumed as
25°C in Figure 13, 15).
t av = Average time in avalanche.
D = Duty cycle in avalanche = t av ·f
Z thJC (D, t av ) = Transient thermal resistance, see Figures 13)
0
25
50 75 100 125 150
Starting T J , Junction Temperature (°C)
175
P D (ave) = 1/2 ( 1.3·BV·I av ) = D T/ Z thJC
I av = 2 D T/ [1.3·BV·Z th ]
E AS (AR) = P D (ave) ·t av
Fig 15. Maximum Avalanche Energy vs. Temperature
5
www.irf.com ? 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
相关PDF资料 |
PDF描述 |
|---|---|
| IRF3704STRR | MOSFET N-CH 20V 77A D2PAK |
| IRF3704ZCSTRLP | MOSFET N-CH 20V 67A D2PAK |
| IRF3704ZSTRLPBF | MOSFET N-CH 20V 67A D2PAK |
| IRF3706STRLPBF | MOSFET N-CH 20V 77A D2PAK |
| IRF3706STRR | MOSFET N-CH 20V 77A D2PAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3610STRLPBF | 功能描述:MOSFET N-CH 100V 103A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF362 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRF36ER100K | 制造商:Vishay Dale 功能描述:IND CHOKE 10UH 10% 2.52MHZ 70 FERRITE 500MA AXL - Tape and Reel |
| IRF36ER101K | 制造商:Vishay Dale 功能描述:IND CHOKE 100UH 10% 2.52MHZ 30 FERRITE 275MA AXL - Tape and Reel |
| IRF36ER102K | 制造商:Vishay Dale 功能描述:IND CHOKE 1MH 10% 796KHZ 50 FERRITE 100MA AXL - Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。