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参数资料
| 型号： | IRF3704ZS |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 8/12页 |
| 文件大小： | 308K |
| 代理商： | IRF3704ZS |
8
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Control FET
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#
#'
P
loss
= P
conduction
+ P
switching
+ P
drive
+ P
output
This can be expanded and approximated by;
(
)
P
loss
=
I
rms
2
×
R
ds(on)
+
I
×
Q
gd
(
i
g
×
V
in
×
f
+
I
×
Q
gs2
i
g
×
V
in
×
f
+
Q
g
×
V
g
×
f
)
+
Q
oss
2
×
V
in
×
f
"(
%&
!"
%& !"
"
)
#
*
%+
%& !"#
# ,
-
./
#
#
#
Synchronous FET
The power loss equation for Q2 is approximated
by;
P
loss
=
P
conduction
+
P
drive
+
P
output
(
+
Q
g
×
V
g
×
f
(
Q
oss
2
*
P
loss
=
I
rms
2
×
R
ds(on)
)
+
×
V
in
×
f
+
Q
rr
×
V
in
×
f
(
)
*dissipated primarily in Q1.
For the synchronous MOSFET Q2, R
is an im-
portant characteristic; however, once again the im-
portance of gate charge must not be overlooked since
it impacts three critical areas. Under light load the
MOSFET must still be turned on and off by the con-
trol IC so the gate drive losses become much more
significant. Secondly, the output charge Q
and re-
verse recovery charge Q
both generate losses that
are transfered to Q1 and increase the dissipation in
that device. Thirdly, gate charge will impact the
MOSFETs’ susceptibility to Cdv/dt turn on.
The drain of Q2 is connected to the switching node
of the converter and therefore sees transitions be-
tween ground and V
. As Q1 turns on and off there is
a rate of change of drain voltage dV/dt which is ca-
pacitively coupled to the gate of Q2 and can induce
a voltage spike on the gate that is sufficient to turn
the MOSFET on, resulting in shoot-through current .
The ratio of Q
/Q
must be minimized to reduce the
potential for Cdv/dt turn on.
Power MOSFET Selection for Non-Isolated DC/DC Converters
Figure A: Q
oss
Characteristic
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF3704ZSPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 11.1mOhms 8.7nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF3704ZSPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRF3704ZSTRLPBF | 功能描述:MOSFET N-CH 20V 67A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3704ZSTRRPBF | 功能描述:MOSFET N-CH 20V 67A D2PAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF3705NS | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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