参数资料
型号: IRF630M
厂商: 意法半导体
英文描述: N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET
中文描述: N沟道200伏- 0.35W - 9A条TO-220/TO-220FP MOSFET的网格密胺
文件页数: 3/9页
文件大小: 343K
代理商: IRF630M
3/9
IRF630M / FP
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 100 V, I
D
= 4.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 160V, I
D
= 9 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
10
14
ns
t
r
Rise Time
15
20
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
31
45
nC
Gate-Source Charge
7.5
nC
Gate-Drain Charge
9
nC
Parameter
Test Conditions
V
DD
= 160V, I
D
= 9 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
12
17
ns
Fall Time
12
17
ns
Cross-over Time
25
35
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
9
A
Source-drain Current (pulsed)
36
A
Forward On Voltage
I
SD
= 9 A, V
GS
= 0
I
SD
= 9 A, di/dt = 100A/μs
V
DD
= 50 V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
170
ns
Reverse Recovery Charge
0.95
μ
C
Reverse Recovery Current
11
A
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220
相关PDF资料
PDF描述
IRF630MFP N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET
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