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参数资料
| 型号： | IRF644NSTRLPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 1/12页 |
| 文件大小： | 313K |
| 代理商： | IRF644NSTRLPBF |
IRF644N
IRF644NS
IRF644NL
HEXFET Power MOSFET
10/07/04
VDSS = 250V
RDS(on) = 240m
ID = 14A
S
D
G
PD - 94107B
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
14
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
9.9
A
IDM
Pulsed Drain Current
56
PD @TC = 25°C
Power Dissipation
150
W
Linear Derating Factor
1.0
W/°C
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy
180
mJ
IAR
Avalanche Current
8.4
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
7.9
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew
10 lbfin (1.1Nm)
D2Pak
IRF644NS
TO-220AB
IRF644N
TO-262
IRF644NL
Description
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
Fifth Generation HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
Document Number: 90069
www.vishay.com
1
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PDF描述 |
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| IRF644NSTRRPBF | 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF644PBF | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF644S | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF644NSTRR | 功能描述:MOSFET N-CH 250V 14A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF644NSTRRPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644PBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644S | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644SPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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