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参数资料
| 型号： | IRF644NSTRLPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件页数： | 3/12页 |
| 文件大小： | 313K |
| 代理商： | IRF644NSTRLPBF |
IRF644N/IRF644NS/IRF644NL
Data and specifications subject to change without notice.
This product has been designed and qualified for the (IRF644N) automotive [Q101]
& (IRF644NS/L) industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10/04
D2Pak Tape & Reel Information
3
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 5.0mH,
RG = 25, IAS = 8.4A. (See Figure 12)
ISD ≤ 8.4A, di/dt ≤ 378A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400s; duty cycle ≤ 2%.
This is a typical value at device destruction
and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
This is only applied to TO-220AB package.
**When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint & soldering techniques refer to
application note #AN-994.
TO-220AB package is not recommended for Surface Mount Application.
Document Number: 90069
www.vishay.com
11
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PDF描述 |
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| IRF644NSTRRPBF | 14 A, 250 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET |
| IRF644PBF | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| IRF644S | 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| IRF740A | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF644NSTRR | 功能描述:MOSFET N-CH 250V 14A D2PAK RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF644NSTRRPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644PBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644S | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF644SPBF | 功能描述:MOSFET N-Chan 250V 14 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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