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参数资料
| 型号： | IRF7410 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率金属氧化物半导体场效应晶体管 |
| 文件页数： | 1/9页 |
| 文件大小： | 102K |
| 代理商： | IRF7410 |
Parameter
Max.
Units
VDS
Drain- Source Voltage
-20
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-16
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-13
A
IDM
Pulsed Drain Current
-65
PD @TA = 25°C
Power Dissipation
2.5
PD @TA = 70°C
Power Dissipation
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
±8
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
07/11/01
www.irf.com
1
IRF7410
HEXFET Power MOSFET
These P-Channel HEXFET Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
PD - 94025
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
G
S
A
D
S
SO-8
VDSS
RDS(on) max
ID
-12V
7m
@VGS = -4.5V
-
16A
9m
@VGS = -2.5V
-
13.6A
13m
@VGS = -1.8V
-
11.5A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7410GPBF | 功能描述:MOSFET P-Ch HEXFET -12V 7mOhm -16A ID RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410GTRPBF | 功能描述:MOSFET MOSFT PCh -12V -16A 7mOhm 91nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 16A 8-Pin SOIC |
| IRF7410PBF | 功能描述:MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410TR | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -16A, 7 mOhm, 91 nC Qg, SO-8 |
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