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参数资料
| 型号： | IRF7410 |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率金属氧化物半导体场效应晶体管 |
| 文件页数： | 4/9页 |
| 文件大小： | 102K |
| 代理商： | IRF7410 |
IRF7410
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
120
0
1
2
3
4
5
6
Q , Total Gate Charge (nC)
-V
,
Gate-to-Source
Voltage
(V)
G
GS
I =
D
-16A
V
=-9.6V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
-V
,Source-to-Drain Voltage (V)
-I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
-V
, Drain-to-Source Voltage (V)
-I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
100us
1ms
10ms
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
14000
C,
Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7410GPBF | 功能描述:MOSFET P-Ch HEXFET -12V 7mOhm -16A ID RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410GTRPBF | 功能描述:MOSFET MOSFT PCh -12V -16A 7mOhm 91nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410HR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 16A 8-Pin SOIC |
| IRF7410PBF | 功能描述:MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7410TR | 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -12V, -16A, 7 mOhm, 91 nC Qg, SO-8 |
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