参数资料
型号: IRF7410
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率金属氧化物半导体场效应晶体管
文件页数: 3/9页
文件大小: 102K
代理商: IRF7410
IRF7410
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
,Drain-to-Source
Current
(A)
-1.0V
20s PULSE WIDTH
Tj = 25°C
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
1
10
100
-I
D
,Drain-to-Source
Current
(A)
-1.0V
20s PULSE WIDTH
Tj = 150°C
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R
,
Drain-to-Source
On
Resistance
(Normalized)
J
DS(on)
°
V
=
I =
GS
D
-4.5V
-16A
1
10
100
1.0
1.2
1.4
1.6
1.8
2.0
V
= -10V
20s PULSE WIDTH
DS
-V
, Gate-to-Source Voltage (V)
-I
,
Drain-to-Source
Current
(A)
GS
D
T = 25 C
J
°
T = 150 C
J
°
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相关代理商/技术参数
参数描述
IRF7410GPBF 功能描述:MOSFET P-Ch HEXFET -12V 7mOhm -16A ID RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IRF7410PBF 功能描述:MOSFET 1 P-CH -12V HEXFET 7mOhms 91nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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