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| 型号： | IRF720 |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 3.3A TO-220AB |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.8 欧姆 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 410pF @ 25V |
| 功率 - 最大： | 50W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRF720 |
IRF720, SiHF720
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( Ω )
Q g (Max.) (nC)
V GS = 10 V
400 V
20
1.8
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
Available
RoHS*
COMPLIANT
Q gs (nC)
Q gd (nC)
Configuration
3.3
11
Single
? Ease of Paralleling
? Simple Drive Requirements
? Compliant to RoHS Directive 2002/95/EC
TO-220AB
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design,
low on-resistance and
G
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
G
D
S
S
N-Channel MOSFET
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220AB
IRF720PbF
SiHF720-E3
IRF720
SiHF720
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
400
± 20
UNIT
V
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
3.3
2.1
A
Pulsed Drain Current a
I DM
13
Linear Derating Factor
0.40
W/°C
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
190
3.3
5.0
mJ
A
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
T C = 25 °C
for 10 s
6-32 or M3 screw
P D
dV/dt
T J , T stg
50
4.0
- 55 to + 150
300 d
10
1.1
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = 50 V, starting T J = 25 °C, L = 30 mH, R g = 25 Ω , I AS = 3.3 A (see fig. 12).
c. I SD ≤ 3.3 A, dI/dt ≤ 65 A/μs, V DD ≤ V DS , T J ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91043
S11-0508-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| IRF7201TR | 功能描述:MOSFET N-CH 30V 7.3A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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