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参数资料
| 型号： | IRF730ASTRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 400V 5.5A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 400V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 3.3A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 600pF @ 25V |
| 功率 - 最大： | 74W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
400
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
R DS(on) (Max.) ( ? )
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
I 2 PAK (TO-262)
V GS = 10 V
D 2 PAK (TO-263)
22
5.8
9.3
Single
D
1.0
? Low Gate Charge Q g Results in Simple Drive
Requirement
? Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
? Fully Characterized Capacitance and Avalanche Voltage
and Current
? Effective C oss Specified
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
G
? Switch Mode Power Supply (SMPS)
G
D
S
G
D
S
? Uninterruptible Power Supply
? High Sspeed Power Switching
S
N-Channel MOSFET
TYPICAL SMPS TOPOLOGIES
? Single Transistor Flyback Xfmr. Reset
? Single Transistor Forward Xfmr. Reset (Both US Line Input
Only)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF730AS-GE3
IRF730ASPbF
SiHF730AS-E3
D 2 PAK (TO-263)
SiHF730ASTRL-GE3 a
IRF730ASTRLPbF a
SiHF730ASTL-E3 a
D 2 PAK (TO-263)
SiHF730ASTRR-GE3 a
IRF730ASTRRPbF a
SiHF730ASTR-E3 a
I 2 PAK (TO-262)
SiHF730AL-GE3
IRF730ALPbF
SiHF730AL-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
400
± 30
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
5.5
3.5
A
Pulsed Drain Current a, e
I DM
22
Linear Derating Factor
0.6
W/°C
Single Pulse Avalanche Energy b, e
Avalanche Current a
Repetiitive Avalanche Energy a
E AS
I AR
E AR
290
5.5
7.4
mJ
A
mJ
Maximum Power Dissipation T C = 25 °C P D
74
W
Peak Diode Recovery dV/dt c, e
dV/dt
4.6
V/ns
Operating Junction and Storage Temperature Range T J , T stg
Soldering Recommendations (Peak Temperature) for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T J = 25 °C, L = 19 mH, R g = 25 ? , I AS = 5.5 A (see fig. 12).
c. I SD ? 5.5 A, dI/dt ? 90 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
e. Uses IRF730A, SiHF730A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91046
S11-1048-Rev. C, 30-May-11
- 55 to + 150
300 d
°C
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| IRF730B | 功能描述:MOSFET 400V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF730BPBF | 功能描述:MOSFET 400V 1ohm@10V 5.5A N/Ch RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| IRF730FI | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.5A I(D) | TO-220VAR |
| IRF730L | 功能描述:MOSFET N-CH 400V 5.5A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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