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| 型号： | IRF7422D2TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 4.3A 8-SOIC |
| 标准包装： | 4,000 |
| 系列： | FETKY™ |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 610pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 带卷 (TR) |
PD- 91412M
IRF7422D2
FETKY TM MOSFET & Schottky Diode
l
l
Co-packaged HEXFET ? Power
MOSFET and Schottky Diode
Ideal For Buck Regulator Applications
A
A
1
2
8
7
A
A
D
D
V DSS = -20V
l
l
l
l
P-Channel HEXFET
Low V F Schottky Rectifier
Generation 5 Technology
SO-8 Footprint
S
G
3
4
Top View
6
5
D
D
R DS(on) = 0.09 ?
Schottky Vf = 0.52V
Description
The FETKY TM family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative
board space saving solution for switching regulator
and power management applications. Generation 5
HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Combinining this technology with International
Rectifier's low forward drop Schottky rectifiers results
in an extremely efficient device suitable for use in a
wide variety of portable electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
Absolute Maximum Ratings
SO-8
Parameter
Maximum
Units
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current à
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt á
Junction and Storage Temperature Range
-4.3
-3.4
-33
2.0
1.3
16
± 12
-5.0
-55 to +150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
Maximum
Units
R θ JA
Junction-to-Ambient ?
62.5
°C/W
Notes:
? Repetitive rating – pulse width limited by max. junction temperature (see fig. 11)
? I SD ≤ -2.2A, di/dt ≤ -50A/μs, V DD ≤ V (BR)DSS , T J ≤ 150°C
? Pulse width ≤ 300μs – duty cycle ≤ 2%
? Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
10/18/04
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7422D2TRPBF | 功能描述:MOSFET MOSFT PCh w/Schttky -4.3A 90mOhm 15nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7423TR | 功能描述:MOSFET N-CH 30V 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF7424 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Ultra Low On-Resistance |
| IRF7424 | 制造商:International Rectifier 功能描述:MOSFET P SO-8 |
| IRF7424.PBF | 制造商:International Rectifier 功能描述:MOSFET P SO-8 制造商:International Rectifier 功能描述:MOSFET, P, SO-8 制造商:International Rectifier 功能描述:MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:30V; On Resistance Rds(on):13.5mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W ;RoHS Compliant: Yes |
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