参数资料
型号: IRF7604TRPBF
厂商: International Rectifier
文件页数: 7/8页
文件大小: 0K
描述: MOSFET P-CH 20V 3.6A MICRO8
标准包装: 1
系列: HEXFET®
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 3.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 90 毫欧 @ 2.4A,4.5V
Id 时的 Vgs(th)(最大): 700mV @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 4.5V
输入电容 (Ciss) @ Vds: 590pF @ 15V
功率 - 最大: 1.8W
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: Micro8?
包装: 标准包装
其它名称: IRF7604TRPBFDKR
IRF7604PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
D
- B-
3
LEAD ASSIGNMENTS
D D D D D1 D1 D2 D2
DIM
A
A1
INCHES
MIN MAX
.036 .044
.004
.008
MILLIMETERS
MIN MAX
0.91 1.11
0.10
0.20
3
E
- A-
8 7 6 5
1 2 3 4
H
0.25 (.010)
M
A
M
8 7 6 5
SINGLE
1 2 3 4
8 7 6 5
DUAL
1 2 3 4
B
C
D
e
e1
.010 .014
.005 .007
.116 .120
.0256 BASIC
.0128 BASIC
0.25 0.36
0.13 0.18
2.95 3.05
0.65 BASIC
0.33 BASIC
e
6X
S S S G
S1 G1 S2 G2
E
H
L
θ
.116
.188
.016
.120
.198
.026
2.95
4.78
0.41
3.05
5.03
0.66
e1
θ
RECOMMENDED FOOTPRINT
-C-
B
8X
0.08 (.003)
M
A1
C A S
A
B S
0.10 (.004)
L
8X
C
8X
1.04
( .041 )
8X
3.20
0.38
( .015 )
4.24
8X
5.28
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
( .126 )
( .167 ) ( .208 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF7501
0.65
( .0256 )
6X
LOT CODE (XX)
DATE CODE (YW) - See table below
Y = YEAR
W = WEEK
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
WW = (27-52) IF PRECEDED BY A LETT ER
YEAR
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
01
02
03
04
24
25
26
W
A
B
C
D
X
Y
Z
YEAR
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
27
28
29
30
50
51
52
W
A
B
C
D
X
Y
Z
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IRF7606TR 功能描述:MOSFET P-CH 30V 3.6A MICRO8 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件