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参数资料
| 型号： | IRF7663TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 8.2A MICRO8 |
| 产品变化通告： | Product Discontinuation 08/Jul/2011 |
| 产品目录绘图： | IR Hexfet Micro-8 |
| 标准包装： | 1 |
| 系列： | HEXFET® |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 2520pF @ 10V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | Micro8? |
| 包装： | 标准包装 |
| 其它名称： | IRF7663DKR |
PD-91866B
IRF7663
HEXFET ? Power MOSFET
q
q
Trench Technology
Ultra Low On-Resistance
S
1
8
A
D
q
q
q
q
P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
S
S
G
2
3
4
7
6
5
D
D
D
V DSS = -20V
R DS(on) = 0.020 ?
T op V ie w
Description
New trench HEXFET ? power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide
variety of applications.
The new Micro8 ? package has half the footprint area of the
standard SO-8. This makes the Micro8 an ideal package for
applications where printed circuit board space is at a premium.
The low profile (<1.1mm) of the Micro8 will allow it to fit easily
into extremely thin application environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
MICRO8 ?
Parameter
Max.
Units
V DS
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
E AS
V GS
T J, T STG
Drain- Source Voltage
Continuous Drain Current, V GS @ -4.5V
Continuous Drain Current, V GS @ -4.5V
Pulsed Drain Current ?
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy ?
Gate-to-Source Voltage
Junction and Storage Temperature Range
-20
-8.2
-6.6
-66
1.8
1.15
10
115
± 12
-55 to + 150
V
A
W
mW/°C
mJ
V
°C
Thermal Resistance
Parameter
Max.
Units
R θ JA
www.irf.com
Maximum Junction-to-Ambient ?
70
°C/W
1
5 /25/00
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF7663TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 20V 8.2A 8PIN MICRO8 - Tape and Reel |
| IRF7663TRPBF | 功能描述:MOSFET MOSFT PCh -20V -8.2A 20mOhm 30nC Micro 8 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7665S2TR1PBF | 功能描述:MOSFET MOSFT 100V 14.7A 60mOhm 8.3nC Qg RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF7665S2TR1PBF | 制造商:International Rectifier 功能描述:Transistor |
| IRF7665S2TRPBF | 功能描述:MOSFET 100V DIGITAL AUDIO 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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