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参数资料
| 型号： | IRF9410 |
| 厂商： | International Rectifier |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7A 8-SOIC |
| 标准包装： | 95 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 27nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 550pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 管件 |
| 其它名称： | *IRF9410 |
PD - 9.1562A
PRELIMINARY
IRF9410
HEXFET ? Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
S
S
S
G
1
2
3
4
8
7
6
5
A
A
D
D
D
D
V DSS = 30V
R DS(on) = 0.030 ?
l
Fully Avalanche Rated
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
S O -8
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Absolute Maximum Ratings ( T A = 25°C Unless Otherwise Noted)
Symbol
Maximum
Units
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
30
± 20
V
Continuous Drain Current ?
Pulsed Drain Current
T A = 25°C
T A = 70°C
I D
I DM
7.0
5.8
37
A
Continuous Source Current (Diode Conduction)
I S
2.8
Maximum Power Dissipation ?
Single Pulse Avalanche Energy ?
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
T A = 25°C
T A = 70°C
P D
E AS
I AR
E AR
dv/dt
T J, T STG
2.5
1.6
70
4.2
0.25
5.0
-55 to + 150
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient ?
Symbol
R θ JA
Limit
50
Units
°C/W
9/15/97
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF9410PBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 30mOhms 18nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9410TR | 功能描述:MOSFET N-CH 30V 7A 8-SOIC RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRF9410TRHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 7A 8SOIC - Tape and Reel |
| IRF9410TRPBF | 功能描述:MOSFET MOSFT 30V 7A 30mOhm 18nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF949TE6700 | 制造商:Infineon Technologies AG 功能描述: |
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