- 您现在的位置：买卖IC网 > Datasheet目录445 > IRF9Z24STRLPBF (Vishay Siliconix)MOSFET P-CH 60V 11A D2PAK Datasheet资料下载
参数资料
| 型号： | IRF9Z24STRLPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 11A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 11A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 280 毫欧 @ 6.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 19nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 570pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
FEATURES
? Halogen-free According to IEC 61249-2-21
V DS (V)
R DS(on) ( ? )
V GS = - 10 V
- 60
0.28
Definition
? Advanced Process Technology
? Surface Mount (IRF9Z24S, SiHF9Z24S)
Q g (Max.) (nC)
Q gs (nC)
Q gd (nC)
Configuration
19
5.4
11
Single
S
? Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
? 175 °C Operating Temperature
? Fast Switching
? P-Channel
? Fully Avalanche Rated
? Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
I 2 PAK (TO-262)
D 2 PAK (TO-263)
G
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
G
D
S
G
D
S
D
P-Channel MOSFET
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D 2 PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D 2 PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
D 2 PAK (TO-263)
SiHF9Z24S-GE3
IRF9Z24SPbF
SiHF9Z24S-E3
D 2 PAK (TO-263)
SiHF9Z24STRL-GE3 a
IRF9Z24STRLPbF a
SiHF9Z24STL-E3 a
D 2 PAK (TO-263)
SiHF9Z24STRR-GE3 a
IRF9Z24STRRPbF a
SiHF9Z24STR-E3 a
I 2 PAK (TO-262)
-
IRF9Z24LPbF
SiHF9Z24L-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 60
± 20
UNIT
V
Continuous Drain Current e
Current a, e
Pulsed Drain
V GS at - 10 V
T C = 25 °C
T C = 100 °C
I D
I DM
- 11
- 7.7
- 44
A
Linear Derating Factor
0.40
W/°C
Single Pulse Avalanche Energy b, e
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
E AS
I AR
E AR
240
- 11
6.0
mJ
A
mJ
Maximum Power Dissipation
T A = 25 °C
T C = 25 °C
P D
3.7
60
W
W
Peak Diode Recovery
dV/dt c, e
dV/dt
- 4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) for 10 s
T J , T stg
- 55 to + 175
300 d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V DD = - 25 V, starting T J = 25 °C, L = 2.3 mH, R g = 25 ? , I AS = - 11 A (see fig. 12).
c. I SD ? - 11 A, dI/dt ? 140 A/μs, V DD ? V DS , T J ? 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| IRFB42N20D | MOSFET N-CH 200V 44A TO-220AB |
| IRFBA1404P | MOSFET N-CH 40V 206A SUPER-220 |
| IRFBF30STRR | MOSFET N-CH 900V 3.6A D2PAK |
| IRFH5255TRPBF | MOSFET N-CH 25V 15A 8VQFN |
| IRFH5306TRPBF | MOSFET N-CH 30V 15A 5X6 PQFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRF9Z24STRR | 功能描述:MOSFET P-Chan 60V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9Z24STRRPBF | 功能描述:MOSFET P-Chan 60V 11 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9Z25 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8.9A I(D) | TO-220AB |
| IRF9Z30 | 功能描述:MOSFET P-Chan 50V 18 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRF9Z30PBF | 功能描述:MOSFET P-Chan 50V 18 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。