参数资料
型号: IRFH7923TRPBF
厂商: International Rectifier
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 30V 15A PQFN56
产品目录绘图: IR Hexfet PQFN
标准包装: 1
系列: HEXFET®
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 15A
开态Rds(最大)@ Id, Vgs @ 25° C: 8.7 毫欧 @ 15A,10V
Id 时的 Vgs(th)(最大): 2.35V @ 25µA
闸电荷(Qg) @ Vgs: 13nC @ 4.5V
输入电容 (Ciss) @ Vds: 1095pF @ 15V
功率 - 最大: 3.1W
安装类型: 表面贴装
封装/外壳: 8-PowerVDFN
供应商设备封装: PQFN(5x6)单芯片焊盘
包装: 标准包装
产品目录页面: 1524 (CN2011-ZH PDF)
其它名称: IRFH7923TRPBFDKR
PD - 96139A
IRFH7923PbF
Applications
HEXFET ? Power MOSFET
l
l
High Frequency Point-of-Load Synchronous Buck
Converter for Applications in Neworking &
Computing Systems
Optimized for Control FET Applications
V DSS
30V
R DS(on) max Qg
8.7m @V GS = 10V 8.7nC
Benefits
l Very low R DS(ON) at 4.5V V GS
l Low Gate Charge
l Fully Characterized Avalanche Voltage and
Current
l 100% Tested for R G
l Lead-Free (Qualified up to 260°C Reflow)
D
D
D
D
S
S
S
G
l
l
l
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
PQFN
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T A = 25°C
I D @ T A = 70°C
I D @ T C = 25°C
I DM
P D @T A = 25°C
P D @T A = 70°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
± 20
15
12
33
120
3.1
2
0.03
-55 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
–––
–––
8.3
40
°C/W
Notes ? through ? are on page 9
www.irf.com
1
06/18/08
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