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参数资料
| 型号： | IRFI9Z24N |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 1/8页 |
| 文件大小： | 119K |
| 代理商： | IRFI9Z24N |
TO-220 FULLPAK
IRFI9Z24N
HEXFET
Power MOSFET
PD - 9.1529A
Parameter
Max.
- 9.5
- 6.7
- 48
29
0.19
± 20
96
-7.2
2.9
- 5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -55V
R
DS(on)
= 0.175
I
D
= -9.5A
8/25/97
S
D
G
Parameter
Typ.
–––
–––
Max.
5.2
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
°C/W
l
Advanced Process Technology
l
Isolated Package
l
High Voltage Isolation = 2.5KVRMS
l
Sink to Lead Creepage Dist. = 4.8mm
l
P-Channel
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial
applications. The moulding compound used provides
a high isolation capability and a low thermal resistance
between the tab and external heatsink. This isolation
is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to
a heatsink using a single clip or by a single screw
fixing.
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