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参数资料
| 型号： | IRFIB8N50K |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 1/8页 |
| 文件大小： | 147K |
| 代理商： | IRFIB8N50K |
4/21/04
www.irf.com
1
SMPS MOSFET
HEXFET Power MOSFET
R
DS(on)
typ.
290m
Switch Mode Power Supply (SMPS)
UninterruptIble Power Supply
High Speed Power Switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Applications
V
DSS
500V
I
D
6.7A
TO-220
FULL-PAK
IRFIB8N50K
Absolute Maximum Ratings
Parameter
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
P
D
@T
C
= 25°C
Power Dissipation
Continuous Drain Current, V
GS
@ 10V
A
Pulsed Drain Current
W
Linear Derating Factor
Gate-to-Source Voltage
W/°C
V
V
GS
dv/dt
T
J
T
STG
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Nm (lbfin)
Parameter
Typ.
–––
–––
–––
Max.
290
6.7
4.5
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Parameter
Typ.
–––
–––
Max.
2.76
65
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
-55 to + 150
300 (1.6mm from case )
1.1(10)
Max.
6.7
4.2
27
45
0.36
±30
17
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相关代理商/技术参数 |
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|---|---|
| IRFIB8N50KPBF | 功能描述:MOSFET N-Chan 500V 6.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIBC20 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A) |
| IRFIBC20G | 功能描述:MOSFET N-Chan 600V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIBC20GPBF | 功能描述:MOSFET N-Chan 600V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIBC30 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=2.5A) |
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