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参数资料
| 型号： | IRFIB8N50K |
| 厂商： | International Rectifier |
| 英文描述： | SMPS MOSFET |
| 中文描述： | MOSFET的开关电源 |
| 文件页数： | 2/8页 |
| 文件大小： | 147K |
| 代理商： | IRFIB8N50K |
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11).
Starting T
J
= 25°C, L = 13mH, R
G
= 25
,
I
AS
= 6.7A, dv/dt = 17V/ns (See Figure 12a).
I
SD
≤
6.7A, di/dt
≤
330A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Min.
500
–––
–––
3.0
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.59
–––
290
350
–––
5.0
–––
50
–––
250
–––
100
–––
-100
Conditions
V
V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
m
V
GS
= 10V, I
D
= 4.0A
V
V
DS
= V
GS
, I
D
= 250μA
μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125°C
nA
V
GS
= 30V
V
GS
= -30V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Min.
4.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
89
–––
24
–––
44
17
–––
16
–––
28
–––
8.4
–––
2160
–––
240
–––
27
–––
2600
–––
62
–––
120
–––
Conditions
V
V
DS
= 50V, I
D
= 4.0A
I
D
= 6.7A
V
DS
= 400V
V
GS
= 10V
V
DD
= 250V
I
D
= 6.7A
R
G
= 38
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 400V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
nC
ns
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse RecoveryCharge
t
on
Forward Turn-On Time
Min.
–––
Typ. Max. Units
–––
6.7
Conditions
MOSFET symbol
A
showing the
integral reverse
–––
–––
27
p-n junction diode.
T
J
= 25°C, I
S
= 6.7A, V
GS
= 0V
T
J
= 25°C, I
F
= 6.7A
di/dt = 100A/μs
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
430
2840
2.0
640
4270
V
ns
nC
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