- 您现在的位置：买卖IC网 > PDF目录384495 > IRFIB6N60A (International Rectifier) Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) PDF资料下载
参数资料
| 型号： | IRFIB6N60A |
| 厂商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=600V, Rds(on)max=0.75ohm, Id=5.5A) |
| 中文描述： | 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 0.75ohm，身份证\u003d 5.5A） |
| 文件页数： | 8/8页 |
| 文件大小： | 149K |
| 代理商： | IRFIB6N60A |
IRFIB6N60A
8
www.irf.com
Part Marking Information
TO-220 Fullpak
EXAMPLE : THIS IS AN IRFI840G
WITH ASSEMBLY
LOT CODE E401
Package Outline
TO-220 Fullpak Outline
Dimensions are shown in millimeters (inches)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
NOTES:
1 DIMENSIONING & TOLERANCING
2 CONTROLLING DIMENSION: INCH.
D
C
A
B
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
3X
2.85 (.112)
2.65 (.104)
2.80 (.110)
2.60 (.102)
4.80 (.189)
4.60 (.181)
7.10 (.280)
6.70 (.263)
3.40 (.133)
3.10 (.123)
- A -
3.70 (.145)
3.20 (.126)
1.15 (.045)
MIN.
3.30 (.130)
3.10 (.122)
- B -
0.90 (.035)
0.70 (.028)
3X
0.25 (.010)
M
A M B
2.54 (.100)
2X
3X
13.70 (.540)
13.50 (.530)
16.00 (.630)
15.80 (.622)
1 2 3
10.60 (.417)
10.40 (.409)
1.40 (.055)
1.05 (.042)
0.48 (.019)
0.44 (.017)
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
ASSEMBLY
LOT CODE
E401 9245
IRFI840G
A
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 5/99
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25
W
, I
AS
= 9.2A. (See Figure 12)
I
SD
￡
9.2A, di/dt
￡
50A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Notes:
Pulse width
￡
300μs; duty cycle
￡
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
t=60s, f=60Hz
相关PDF资料 |
PDF描述 |
|---|---|
| IRFIB8N50K | SMPS MOSFET |
| IRFIBC30 | 30 AMP MINIATURE POWER RELAY |
| IRFIBC30G | GT 19C 19#16 PIN RECP BOX |
| IRFIBE30 | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=2.1A) |
| IRFIBE30G | N-Channel HEXFET Power MOSFET(800V,2.1A HEXFET 功率MOS场效应管) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFIB6N60APBF | 功能描述:MOSFET N-Chan 600V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB7N50A | 功能描述:MOSFET N-Chan 500V 6.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB7N50APBF | 功能描述:MOSFET N-Chan 500V 6.6 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFIB7N50L | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFIB7N50LPBF | 功能描述:MOSFET N-Chan 500V 6.8 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。