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| 型号： | IRFIZ46NPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 33A TO220FP |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 19A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 61nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 25V |
| 功率 - 最大： | 45W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB 整包 |
| 包装： | 管件 |
| 其它名称： | *IRFIZ46NPBF |
IRFIZ46NPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
55
???
??? V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
R DS(on) Static Drain-to-Source On-Resistance
???
???
0.017
???
??? V/°C Reference to 25°C, I D = 1mA ?
0.020 ? V GS = 10V, I D = 19A ?
25 V DS = 55V, V GS = 0V
250 V DS = 44V, V GS = 0V, T J = 150°C
100 V GS = 20V
-100 V GS = -20V
??? I D = 28A
??? R G = 12 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
2.0
16
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
???
12
80
43
52
4.0 V V DS = V GS , I D = 250μA
??? S V DS = 25V, I D = 28A ?
μA
nA
61 I D = 28A
13 nC V DS = 44V
24 V GS = 10V, See Fig. 6 and 13 ??
??? V DD = 28V
ns
??? R D = 0.98 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
???
???
4.5
7.5
???
???
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
??? V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
???
???
???
???
1500
450
160
12
??? V GS = 0V
pF
??? ? = 1.0MHz, See Fig. 5 ?
??? ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
V SD
t rr
Q rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
???
???
???
???
???
???
???
???
72
210
33
180
1.3
110
310
A
V
ns
nC
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T J = 25°C, I S = 19A, V GS = 0V ?
T J = 25°C, I F = 28A
di/dt = 100A/μs ??
G
D
S
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? I SD ≤ 28A, di/dt ≤ 240A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? t=60s, ?=60Hz
2
? V DD = 25V, starting T J = 25°C, L = 410μH
R G = 25 ? , I AS = 28A. (See Figure 12)
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRFZ46N data and test conditions
www.irf.com
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