- 您现在的位置：买卖IC网 > Datasheet目录445 > IRFIZ48NPBF (International Rectifier)MOSFET N-CH 55V 40A TO220FP Datasheet资料下载
参数资料
| 型号： | IRFIZ48NPBF |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 40A TO220FP |
| 产品目录绘图： | IR Hexfet TO-220FULLPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 22A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 89nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 25V |
| 功率 - 最大： | 54W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB 整包 |
| 包装： | 管件 |
| 其它名称： | *IRFIZ48NPBF |
PD -94835
V DSS = 55V
l AdvancedProcessTechnology
l Isolated Package
l High Voltage Isolation = 2.5KVRMS ?
l Sink to Lead Creepage Dist. = 4.8mm
l Fully Avalanche Rated
l Lead-Free
Description
G
IRFIZ48NPbF
HEXFET ? Power MOSFET
D
R DS(on) = 0.016 ?
I D = 40A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
I D @ T C = 25°C
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J
T STG
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
40
29
210
54
0.36
± 20
270
32
5.4
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
???
???
2.8
65
°C/W
11/13/03
相关PDF资料 |
PDF描述 |
|---|---|
| IRFIZ48N | MOSFET N-CH 55V 36A TO220FP |
| IRFL024NTR | MOSFET N-CH 55V 2.8A SOT223 |
| IRFL1006TR | MOSFET N-CH 60V 1.6A SOT223 |
| IRFL4105PBF | MOSFET N-CH 55V 3.7A SOT223 |
| IRFL4105 | MOSFET N-CH 55V 3.7A SOT223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFIZ48NPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 36A TO-220FP |
| IRFIZ48V | 制造商:International Rectifier 功能描述:MOSFET, 60V, 39A, 12 mOhm, 73.3 nC Qg, TO-220 FULLPACK |
| IRFIZ48VPBF | 功能描述:MOSFET MOSFT 60V 39A 12mOhm 73.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFJ120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-213AA |
| IRFJ121 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-213AA |
发布紧急采购，3分钟左右您将得到回复。