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| 型号： | IRFIZ48NPBF |
| 厂商： | International Rectifier |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 40A TO220FP |
| 产品目录绘图： | IR Hexfet TO-220FULLPAK |
| 标准包装： | 3,000 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 40A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 16 毫欧 @ 22A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 89nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1900pF @ 25V |
| 功率 - 最大： | 54W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 整包 |
| 供应商设备封装： | TO-220AB 整包 |
| 包装： | 管件 |
| 其它名称： | *IRFIZ48NPBF |
IRFIZ48NPbF
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
μA
100 V GS = 20V
-100
V GS = -20V
??? I D = 32A
??? R G = 5.1 ?
V (BR)DSS
? V (BR)DSS / ? T J
R DS(on)
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
55
???
???
2.0
22
???
???
???
???
???
???
???
???
???
???
???
???
0.052
???
???
???
???
???
???
???
???
???
???
11
78
32
48
??? V V GS = 0V, I D = 250μA
??? V/°C Reference to 25°C, I D = 1mA ?
0.016 ? V GS = 10V, I D = 22A ?
4.0 V V DS = V GS , I D = 250μA
??? S V DS = 25V, I D = 32A ?
25 V DS = 55V, V GS = 0V
250 V DS = 44V, V GS = 0V, T J = 150°C
nA
89 I D = 32A
20 nC V DS = 44V
39 V GS = 10V, See Fig. 6 and 13 ??
??? V DD = 28V
ns
??? R D = 0.85 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
???
???
4.5
7.5
???
???
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
??? V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
???
???
???
???
1900
620
270
12
??? V GS = 0V
pF
??? ? = 1.0MHz, See Fig. 5 ?
??? ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
???
???
???
???
49
210
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
???
???
???
???
94
360
1.3
140
540
V
ns
nC
T J = 25°C, I S = 22A, V GS = 0V ?
T J = 25°C, I F = 32A
di/dt = 100A/μs ??
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 25V, starting T J = 25°C, L = 530μH
R G = 25 ? , I AS = 32A. (See Figure 12)
? I SD ≤ 32A, di/dt ≤ 250A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRFZ48N data and test conditions
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFIZ48NPBF | 制造商:International Rectifier 功能描述:MOSFET Transistor RoHS Compliant:Yes 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 55V, 36A TO-220FP |
| IRFIZ48V | 制造商:International Rectifier 功能描述:MOSFET, 60V, 39A, 12 mOhm, 73.3 nC Qg, TO-220 FULLPACK |
| IRFIZ48VPBF | 功能描述:MOSFET MOSFT 60V 39A 12mOhm 73.3nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFJ120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-213AA |
| IRFJ121 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-213AA |
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