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| 型号： | IRFL1006TR |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 1.6A SOT223 |
| 标准包装： | 2,500 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 220 毫欧 @ 1.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 160pF @ 25V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
PD - 91876
IRFL1006
HEXFET ? Power MOSFET
l
l
l
l
l
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
G
D
V DSS = 60V
R DS(on) = 0.22 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings
S
S O T -2 2 3
I D = 1.6A
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V**
2.3
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 25°C
V GS
E AS
I AR
E AR
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V*
Continuous Drain Current, V GS @ 10V*
Pulsed Drain Current ?
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ? *
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
°C/W
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
1
3/29/99
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