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| 型号： | IRFP044N |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 55V 53A TO-247AC |
| 标准包装： | 25 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 55V |
| 电流 - 连续漏极(Id) @ 25° C： | 53A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 20 毫欧 @ 29A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 61nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1500pF @ 25V |
| 功率 - 最大： | 120W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AC |
| 包装： | 散装 |
| 其它名称： | *IRFP044N |
PD - 9.1410A
IRFP044N
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
l
l
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
V DSS = 55V
R DS(on) = 0.020 ?
I D = 53A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
TO-247AC
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
53
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
37
180
120
0.77
± 20
230
28
12
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.3
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
–––
40
°C/W
8/25/97
相关PDF资料 |
PDF描述 |
|---|---|
| IRFP048N | MOSFET N-CH 55V 64A TO-247AC |
| IRFP054N | MOSFET N-CH 55V 81A TO-247AC |
| IRFP140N | MOSFET N-CH 100V 33A TO-247AC |
| IRFP150A | MOSFET N-CH 100V 43A TO-3 |
| IRFP150N | MOSFET N-CH 100V 42A TO-247AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFP044N | 制造商:International Rectifier 功能描述:Single N-Channel HEXFET Power MOSFET Dr |
| IRFP044NHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-247AC |
| IRFP044NPBF | 功能描述:MOSFET MOSFT 55V 49A 20mOhm 40.7nCAC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP044PBF | 功能描述:MOSFET N-Chan 60V 57 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP045 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | TO-247AC |
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