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| 型号： | IRFP140N |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 33A TO-247AC |
| 标准包装： | 25 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 33A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 16A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 94nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 25V |
| 功率 - 最大： | 140W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | TO-247AC |
| 包装： | 散装 |
| 其它名称： | *IRFP140N |
PD - 91343B
IRFP140N
HEXFET ? Power MOSFET
l
Advanced Process Technology
l
l
l
l
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
D
V DSS = 100V
R DS(on) = 0.052 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole.
Absolute Maximum Ratings
S
TO-247AC
I D = 33A
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V ?
33
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V ?
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ??
23
110
140
0.91
±20
300
16
14
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
-55 to + 175
300 (1.6mm from case)
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R θ JC
Junction-to-Case
––––
––––
1.1
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––––
––––
0.24
––––
––––
40
°C/W
www.irf.com
1
10/5/98
相关PDF资料 |
PDF描述 |
|---|---|
| IRFP150A | MOSFET N-CH 100V 43A TO-3 |
| IRFP150N | MOSFET N-CH 100V 42A TO-247AC |
| IRFP250 | MOSFET N-CH 200V 30A TO-247AD |
| IRFP260 | MOSFET N-CH 200V 46A TO247 |
| IRFP264 | MOSFET N-CH 250V 38A TO247 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFP140N_R4942 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP140NPBF | 功能描述:MOSFET MOSFT 100V 27A 52mOhm 62.7nCAC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP140NPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFP140PBF | 功能描述:MOSFET N-Chan 100V 31 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP140R | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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