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参数资料
| 型号： | IRFP460ASPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMD-247, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 115K |
| 代理商： | IRFP460ASPBF |
www.irf.com
1
01/17/01
IRFP460AS
SMPS MOSFET
HEXFET Power MOSFET
VDSS
Rds(on) max
ID
500V
0.27
20A
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
20
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
13
A
IDM
Pulsed Drain Current
80
PD @TC = 25°C
Power Dissipation
280
W
Linear Derating Factor
2.2
W/°C
VGS
Gate-to-Source Voltage
± 30
V
dv/dt
Peak Diode Recovery dv/dt
3.8
V/ns
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Notes
through are on page 8
SMD-247
l Dynamic dv/dt Rating
l Repetitive Avalanche Rated
l Isolated Central Mounting Hole
l Fast Switching
l Ease of Paralleling
l Simple Drive Requirements
l Solder plated and leadformed for surface mounting
Description
Third Generation HEXFETs from International Rectifier provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220
devices. The TO-247 is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also provides
greater creepage distance between pins to meet the requirements of
most safety specifications.
This plated and leadformed version of the TO-247 package allows
the package to be surface mounted in an application.
Maximum Reflow Temperature
230 (Time above 183 °C
should not exceed 100s)
°C
Benefits
Applications
l SMPS, UPS, Welding and High Speed
Power Switching
PD-94011A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFP460B | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET |
| IRFP460BPBF | 功能描述:MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460C | 功能描述:MOSFET 500V N-Channel C-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460LC | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460LCPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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