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参数资料
| 型号： | IRFP460ASPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | JFETs |
| 英文描述： | 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | SMD-247, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 115K |
| 代理商： | IRFP460ASPBF |
IRFP460AS
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
20
40
60
80
100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
,
Gate-to-Source
Voltage
(V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
19A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
,Source-to-Drain Voltage (V)
I
,
Reverse
Drain
Current
(A)
SD
V
= 0 V
GS
T = 25 C
J
°
T = 150 C
J
°
1
10
100
1000
10000
100000
1
1 0
100
1000
C,
Ca
p
a
c
it
a
n
c
e
(p
F
)
DS
V
, D ra in-to -S ource V olta g e (V)
A
V
= 0V,
f = 1M H z
C
= C
+ C
, C
SH O RTED
C
= C
C
= C
+ C
GS
is s
g s
g d
d s
rs s
g d
o s s
d s
g d
C iss
C oss
Crss
20A
1
10
100
1000
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
= 150 C
= 25 C
°
J
C
V
, Drain-to-Source Voltage (V)
I
,
Drain
Current
(A)
I
,
Drain
Current
(A)
DS
D
10us
100us
1ms
10ms
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFP460B | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET |
| IRFP460BPBF | 功能描述:MOSFET 500V 250mOhm@10V 20A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460C | 功能描述:MOSFET 500V N-Channel C-FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460LC | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFP460LCPBF | 功能描述:MOSFET N-Chan 500V 20 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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