参数资料
型号: IRFR3709Z
厂商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件页数: 10/11页
文件大小: 217K
代理商: IRFR3709Z
10
www.irf.com
0-.
6.73 (.265)
6.35 (.250)
- A -
6.22 (.245)
5.97 (.235)
- B -
3X0.64 (.025)
0.25 (.010) M A M B
2.28 (.090)
2X
1.14 (.045)
0.76 (.030)
5.46 (.215)
5.21 (.205)
1.27 (.050)
0.88 (.035)
2.38 (.094)
2.19 (.086)
1.14 (.045)
0.89 (.035)
0.58 (.023)
0.46 (.018)
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
9.65 (.380)
8.89 (.350)
3X
2.28 (.090)
1.91 (.075)
1.52 (.060)
1.15 (.045)
4
1 2 3
6.45 (.245)
5.68 (.224)
0.58 (.023)
0.46 (.018)
WEEK = 16
DATE CODE
YEAR = 0
Notes: This part marking information applies to devices produced before 02/26/2001
EXAMPLE:
LOT CODE 9U1P
THIS IS AN IRFR120
WITH ASSEMBLY
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
9U
1P
016
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
ASSEMBLY
EXAMPLE:
WITH ASSEMBLY
LOT CODE 5678
THIS IS AN IRFR120
YEAR 9 = 1999
WEEK 19
DATE CODE
LINE A
IN THE ASSEMBLY LINE "A"
ASSEMBLED ON WW 19, 1999
PART NUMBER
Notes: This part marking information applies to devices produced after 02/26/2001
56
IRFU120
919A
78
相关PDF资料
PDF描述
IRFU3709Z HEXFET Power MOSFET
IRFR3710ZPBF AUTOMOTIVE MOSFET
IRFU3710ZPbF AUTOMOTIVE MOSFET
IRFR3711ZCPBF HEXFET Power MOSFET
IRFU3711ZCPBF HEXFET Power MOSFET
相关代理商/技术参数
参数描述
IRFR3709ZCPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR3709ZCTRPBF 功能描述:MOSFET MOSFET, 30V, 86A, 6.5 mOhm, 17 nC Qg, D-Pak RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR3709ZCTRRP 功能描述:MOSFET MOSFET, 30V, 86A, 6.5 mOhm, 17 nC Qg, D-Pak RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFR3709ZHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 86A 3-Pin(2+Tab) DPAK
IRFR3709ZPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube