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参数资料
| 型号： | IRFR3709Z |
| 厂商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件页数： | 2/11页 |
| 文件大小： | 217K |
| 代理商： | IRFR3709Z |
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
22
–––
5.2
6.5
6.5
8.2
1.80
2.25
-5.6
–––
–––
1.0
–––
150
–––
100
–––
-100
–––
–––
17
26
4.7
–––
1.6
–––
5.7
–––
5.0
–––
7.3
–––
10
–––
12
–––
12
–––
15
–––
3.9
–––
2330
–––
460
–––
230
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 16
nC
ns
pF
Parameter
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Diode Characteristics
Parameter
I
S
Continuous Source Current
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min.
–––
Typ. Max. Units
–––
86
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
340
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
29
25
1.0
44
37
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
–––
V
GS
= 4.5V
I
D
= 12A
Typ.
–––
–––
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
Clamped Inductive Load
V
DS
= 15V, I
D
= 12A
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 12A
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
Conditions
7.9
Max.
100
12
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