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参数资料
| 型号： | IRFR9110 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 2/7页 |
| 文件大小： | 62K |
| 代理商： | IRFR9110 |
4-78
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR9110, IRFU9110
-100
-100
±
20
3.1
Refer to Peak Current Curve
Refer to UIS Curve
25
0.2
-55 to 150
UNITS
V
V
V
A
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
W
W/
o
C
o
C
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
-100
-
-
V
Gate to Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
-2.0
-
-4.0
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -100V,
V
GS
= 0V
T
C
= 25
o
C
T
C
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 1.9A, V
GS
= -10V
-
-
1.200
Turn-On Time
t
ON
V
DD
= -50V, I
D
= 4A
R
L
= 11
, V
GS
= -10V
R
GS
= 24
-
-
50
ns
Turn-On Delay Time
t
d(ON)
-
10
-
ns
Rise Time
t
r
-
27
-
ns
Turn-Off Delay Time
t
d(OFF)
-
15
-
ns
Fall Time
t
f
-
17
-
ns
Turn-Off Time
t
OFF
-
-
50
ns
Total Gate Charge
Q
g
V
GS
= 0 to -10V
V
DD
= -80V,
I
D
= 3.1A,
R
L
= 25.8
-
-
8.7
nC
Gate to Drain Charge
Q
gd
-
-
4.1
nC
Gate to Source Charge
Q
gs
-
-
2.2
nC
Input Capacitance
C
ISS
V
DS
= -25V, V
GS
= 0V
f = 1MHz
-
290
-
pF
Output Capacitance
C
OSS
-
94
-
pF
Reverse Transfer Capacitance
C
RSS
-
18
-
pF
Thermal Resistance Junction to Case
R
θ
JC
-
-
5.00
o
C/W
Thermal Resistance Junction to Ambient
R
θ
JA
-
-
100
o
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= -3.1A
-
-
-5.5
V
Reverse Recovery Time
t
rr
I
SD
= -4.0A, dI
SD
/dt = -100A/
μ
s
-
105
160
ns
Reverse Recovery Charge
Q
RR
0.51
1.0
μ
C
IRFR9110, IRFU9110
相关PDF资料 |
PDF描述 |
|---|---|
| IRFU9110 | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
| IRFR9220PBF | HEXFET㈢ Power MOSFET |
| IRFU9220PBF | HEXFET㈢ Power MOSFET |
| IRFR9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
| IRFU9220 | 3.6A, 200V, 1.500 Ohm, P-Channel Power MOSFETs |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR91109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9110PBF | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9110TF | 制造商:International Rectifier 功能描述: |
| IRFR9110TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFR9110TR | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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