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参数资料
| 型号： | IRFR9110 |
| 厂商： | HARRIS SEMICONDUCTOR |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs(3.1A, 100V, 1.200 Ω, P沟道功率MOS场效应管) |
| 中文描述： | 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件页数： | 4/7页 |
| 文件大小： | 62K |
| 代理商： | IRFR9110 |
4-80
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-10
-7.75
-1
0.01
0.1
1
10
E
AS
= 140mJ
CONDITIONS:
V
DD
= -25V, I
AS
= -3.1A,
L = 21mH, STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R) In [(I
AS
* R) / (1.3 RATED BV
DSS
- V
DD
+1]
T
AV
, TIME IN AVALANCHE (ms)
I
A
,
0
0
-2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-4
-6
-8
-10
-1
-2
-3
-4
-5
-6
I
D
,
V
GS
= -5V
V
GS
= -6V
V
GS
= -8V
V
GS
= -7V
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -20V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
0
-2
-4
-6
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
,
0
-55
o
C
150
o
C
25
o
C
-4
-6
-10
-8
-8
-10
-2
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, I
D
= -250
μ
A
2.5
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
180
N
T
J
, JUNCTION TEMPERATURE (
o
C)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10V, I
D
= -3.1A
O
T
J
, JUNCTION TEMPERATURE (
o
C)
N
T
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
120
160
V
GS
= V
DS
, ID = -250
μ
A
IRFR9110, IRFU9110
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFR91109A | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFR9110PBF | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| IRFR9110TF | 制造商:International Rectifier 功能描述: |
| IRFR9110TM | 制造商:Samsung Semiconductor 功能描述: |
| IRFR9110TR | 功能描述:MOSFET P-Chan 100V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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