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参数资料
| 型号： | IRFSL9N60ATRR |
| 厂商： | Vishay Siliconix |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V 9.2A TO-262 |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 750 毫欧 @ 5.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 49nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 25V |
| 功率 - 最大： | 170W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-262-3，长引线，I²Pak，TO-262AA |
| 供应商设备封装： | TO-262-3 |
| 包装： | 带卷 (TR) |
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? )
Q g (Max.) (nC)
V GS = 10 V
600
49
0.75
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? Low Gate Charge Q g Results in Simple Drive
Requirement
Q gs (nC)
Q gd (nC)
Configuration
I 2 PAK
(TO-262)
13
20
Single
D
? Improved Gate, Avalanche and Dynamic
dV/dt Ruggedness
? Fully Characterized Capacitance and Avalanche Voltage
and Current
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
?
Switch Mode Power Supply (SMPS)
G
?
?
?
Uninterruptable Power Supply
High Speed Power Switching
This Device is only for Through Hole Application
G
D
S
S
N-Channel MOSFET
APPLICABLE OFF LINE SMPS TOPOLOGIES
? Active Clamped Forward
? Main Switch
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
I 2 PAK (TO-262)
SiHFSL9N60A-GE3
IRFSL9N60APbF
SiHFSL9N60A-E3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
600
± 30
UNIT
V
Continuous Drain Current
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
9.2
5.8
A
Pulsed Drain Current a
I DM
37
Linear Derating Factor
1.3
W/°C
Single Pulse Avalanche Energy b
E AS
290
mJ
Repetitive Avalanche
Current a
I AR
9.2
A
Repetitive Avalanche Energy a
E AR
17
mJ
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T C = 25 °C
for 10 s
P D
dV/dt
T J , T stg
170
5.0
- 55 to + 150
300 d
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T J = 25 °C, L = 6.8 mH, R g = 25 ? , I AS = 9.2 A (see fig. 12).
c. I SD ? 9.2 A, dI/dt ? 50 A/μs, V DD ? V DS , T J ? 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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