参数资料
型号: IRFSL9N60ATRR
厂商: Vishay Siliconix
文件页数: 7/9页
文件大小: 0K
描述: MOSFET N-CH 600V 9.2A TO-262
标准包装: 800
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 600V
电流 - 连续漏极(Id) @ 25° C: 9.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 750 毫欧 @ 5.5A,10V
Id 时的 Vgs(th)(最大): 4V @ 250µA
闸电荷(Qg) @ Vgs: 49nC @ 10V
输入电容 (Ciss) @ Vds: 1400pF @ 25V
功率 - 最大: 170W
安装类型: 通孔
封装/外壳: TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装: TO-262-3
包装: 带卷 (TR)
IRFSL9N60A, SiHFSL9N60A
Vishay Siliconix
Peak Dio d e Recovery d V/ d t Test Circuit
D.U.T.
+
Circuit layout con s ideration s
? Low s tray inductance
? G round plane
? Low leakage inductance
current tran s former
-
+
-
-
+
R g
?
?
?
?
dV/dt controlled by R g
Driver s ame type a s D.U.T.
I S D controlled by duty factor “D”
D.U.T. - device under te s t
+
-
V DD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = 10 V a
D.U.T. l S D waveform
Rever s e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V D S waveform
Diode recovery
Re-applied
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = 5 V for logic level device s
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90362 .
Document Number: 90362
S11-1045-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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