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参数资料
| 型号： | IRFZ24STRRPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 17A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 640pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | TO-263（D2Pak） |
| 包装： | 带卷 (TR) |
IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S
Vishay Siliconix
Peak Dio d e Recovery d V/ d t Test Circuit
D.U.T.
+
Circuit layout con s ideration s
? Low s tray inductance
? G round plane
? Low leakage inductance
current tran s former
-
+
-
-
+
R g
?
?
?
?
dV/dt controlled by R g
Driver s ame type a s D.U.T.
I S D controlled by duty factor “D”
D.U.T. - device under te s t
+
-
V DD
Driver gate drive
P.W.
Period
D=
P.W.
Period
V GS = 10 V a
D.U.T. l S D waveform
Rever s e
recovery
current
Body diode forward
current
dI/dt
D.U.T. V D S waveform
Diode recovery
Re-applied
dV/dt
V DD
voltage
Inductor current
Body diode forward drop
Ripple ≤ 5 %
I S D
Note
a. V GS = 5 V for logic level device s
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?90366 .
Document Number: 90366
S11-1063-Rev. C, 30-May-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料 |
PDF描述 |
|---|---|
| IRFZ34E | MOSFET N-CH 60V 28A TO-220AB |
| IRFZ34NL | MOSFET N-CH 55V 29A TO-262 |
| IRFZ34STRLPBF | MOSFET N-CH 60V 30A D2PAK |
| IRFZ44ESTRL | MOSFET N-CH 60V 48A D2PAK |
| IRFZ44E | MOSFET N-CH 60V 48A TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFZ24V | 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=60mohm, Id=17A) |
| IRFZ24VHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 17A 3PIN TO-220AB - Bulk |
| IRFZ24VL | 制造商:未知厂家 制造商全称:未知厂家 功能描述:60V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
| IRFZ24VLPBF | 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET |
| IRFZ24VPBF | 制造商:International Rectifier 功能描述:MOSFET N 60V 17A TO-220 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 17A, TO-220 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 17A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation ;RoHS Compliant: Yes |
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