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| 型号： | IRFZ44E |
| 厂商： | International Rectifier |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 48A TO-220AB |
| 标准包装： | 50 |
| 系列： | HEXFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 48A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 23 毫欧 @ 29A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 60nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1360pF @ 25V |
| 功率 - 最大： | 110W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | *IRFZ44E |
PD - 91671B
IRFZ44E
HEXFET ? Power MOSFET
l
l
Advanced Process Technology
Dynamic dv/dt Rating
D
V DSS = 60V
l
l
l
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
G
S
R DS(on) = 0.023 ?
I D = 48A
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
48
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ? ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ?
Avalanche Current ?
Repetitive Avalanche Energy ?
Peak Diode Recovery dv/dt ?
34
192
110
0.71
± 20
220
29
11
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
-55 to + 175
300 (1.6mm from case )
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.4
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
–––
62
°C/W
www.irf.com
1
7/6/99
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| IRFZ46NSTRL | MOSFET N-CH 55V 53A D2PAK |
| IRFZ48NL | MOSFET N-CH 55V 64A TO-262 |
| IRFZ48VSTRLPBF | MOSFET N-CH 60V 72A D2PAK |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRFZ44E-004HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRFZ44EHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-220AB - Bulk |
| IRFZ44EL | 功能描述:MOSFET N-CH 60V 48A TO-262 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| IRFZ44EL-103HR | 制造商:International Rectifier 功能描述:HI-REL DISCRETE - Rail/Tube |
| IRFZ44ELHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-262 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 48A 3PIN TO-262 - Bulk |
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