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参数资料
| 型号： | IRFZ34STRLPBF |
| 厂商： | Vishay Siliconix |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 30A D2PAK |
| 标准包装： | 800 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 30A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 18A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 46nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 25V |
| 功率 - 最大： | 3.7W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 带卷 (TR) |
IRFZ34S, IRFZ34L, SiHFZ34S, SiHFZ34L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
(PCB Mount) a
Maximum Junction-to-Case (Drain)
SYMBOL
R thJA
R thJC
TYP.
-
-
MAX.
40
1.7
UNIT
°C / W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (T J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
V DS
V GS = 0 V, I D = 250 μA
60
-
-
V
V DS Temperature Coefficient
? V DS /T J
Reference to 25 °C, I D = 1
mA c
-
0.065
-
V/°C
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 250 μA
V GS = ± 20 V
V DS = 60 V, V GS = 0 V
V DS = 48 V, V GS = 0 V, T J = 150 °C
2.0
-
-
-
-
-
-
-
4.0
± 100
25
250
V
nA
μA
Drain-Source On-State Resistance
R DS(on)
V GS = 10 V
I D = 18 A b
-
-
0.05
?
Forward Transconductance
g fs
V DS = 25 V, I D = 18 A b
9.3
-
-
S
Dynamic
Input Capacitance
C iss
V GS = 0 V,
-
1200
-
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C oss
C rss
Q g
V DS = 25 V,
f = 1.0 MHz, see fig. 5 c
-
-
-
600
100
-
-
-
46
pF
Gate-Source Charge
Q gs
V GS = 10 V
I D = 30 A, V DS = 48 V,
see fig. 6 and 13 b, c
-
-
11
nC
Gate-Drain Charge
Turn-On Delay Time
Q gd
t d(on)
-
-
-
13
22
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
t r
t d(off)
t f
L S
V DD = 30 V, I D = 30 A,
R g = 12 ? , R D = 1.0 ? , see fig. 10 b, c
Between lead, and center of die contact
-
-
-
-
100
29
52
7.5
-
-
-
-
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current a
I S
I SM
MOSFET symbol
showing the
integral reverse
p - n junction diode
G
D
S
-
-
-
-
30
120
A
Body Diode Voltage
V SD
T J = 25 °C, I S = 30 A, V GS = 0
V b
-
-
1.6
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t rr
Q rr
T J = 25 °C, I F = 30 A, dI/dt = 100 A/μs b, c
-
-
120
700
230
1400
ns
μC
Forward Turn-On Time
t on
Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D )
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ? 300 μs; duty cycle ? 2 %.
c. Uses IRFZ34, SiHFZ34 data and test conditions.
www.vishay.com
2
Document Number: 90368
S11-1045-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| IRFZ34STRR | 功能描述:MOSFET N-Chan 60V 30 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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