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参数资料
| 型号： | IRG4PC40UD2 |
| 厂商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小时 |
| 文件页数： | 7/35页 |
| 文件大小： | 112K |
| 代理商： | IRG4PC40UD2 |
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The IGBT Structure
IR
G
4
B
C
4
0
S
D
Diode
International Rectifier
Speed Designator
S Standard
F Fast
M Short Cicuit Fast
U UltraFast
K Short Circuit UltraFast
IGBT
Generation
Modifier
Die Size
Voltage Designator
C 600v E 800v
F 900v G 1000v
H 1200v
Package Designator
B T0220
P T0247
Basic IGBT Structure
The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the
terminal called Collector is, actually, the Emitter of the PNP. In spite of its
similarity to the cross-section of a power MOSFET, operating of the two
transistors is fundamentally different, the IGBT being a minority carrier device.
Except for the P + substrate is virtually identical to that of a power MOSFET,
both devices share a similar polysilicon gate structure and P wells with N +
source contacts. In both devices the N-type material under the P wells is sized
in thickness and reistivity to sustain the full voltage rating of the device.
However, in spite of the many similarities, he physical operation of the IGBT is
closer to that of a bipolar transistor than to that of a power MOSFET. This is
due to the P + substrate which is responsible for the minority carrier injection
into the N regtion and the resulting conductivity modulation, a significant share
of the conduction losses occur in the N region, typically 70% in a 500v device.
The part number itself contains in coded form the key features of the IGBT. An
explanation of the nomenclature in contained below.
IGBT / CoPack
Quarterly Reliability Report
Page 7 of 35
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| IRG4PE40UD | Fit Rate / Equivalent Device Hours |
| IRG4PF40FD | Fit Rate / Equivalent Device Hours |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PC40UD-EPBF | 功能描述:IGBT 晶体管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PC40UDPBF | 功能描述:IGBT 晶体管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PC40UPBF | 功能描述:IGBT 晶体管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PC40W | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC40WPBF | 功能描述:IGBT 晶体管 600V Warp 60-150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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