参数资料
型号: IRG4PH30
厂商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
中文描述: 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典型.\u003d 3.10V,@和VGE \u003d 15V的,集成电路\u003d 10A条)
文件页数: 10/10页
文件大小: 212K
代理商: IRG4PH30
IRG4PH30KD
10
www.irf.com
Dimensions in Millimeters and (Inches)
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
3.65 (.143)
3.55 (.140)
0.25 (.010)
3X
0.80 (.031)
0.40 (.016)
2.60 (.102)
2.20 (.087)
3.40 (.133)
3.00 (.118)
3X
0.25 (.010)
M
C
A
S
4.30 (.170)
3.70 (.145)
- C -
2X
5.50 (.217)
4.50 (.177)
5.50 (.217)
1.40 (.056)
1.00 (.039)
D
M
M
B
- A -
15.90 (.626)
15.30 (.602)
- B -
1
2
3
20.30 (.800)
19.70 (.775)
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
*
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M , 1982.
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETERS (INCHES).
4 CONFORM S TO JEDEC OUTLINE
TO-247AC.
LEAD ASSIGNMENTS
1 - GATE
2 - COLLECTOR
3 - EMITTER
4 - COLLECTOR
*
LONGER LEADED (20m m )
VERSION AVAILABLE (TO-247AD)
TO PART NUM BER
Case Outline
TO-247AC
Notes:
Repetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature
(figure 20)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH, R
G
= 23
(figure 19)
Pulse width
80μs; duty factor
0.1%.
Pulse width 5.0μs, single shot.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE:
439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
相关PDF资料
PDF描述
IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)
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IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A)
IRG4PH40KPBF Short Circuit Rated UltraFast IGBT
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