- 您现在的位置：买卖IC网 > PDF目录377518 > IRG4PH30 (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) PDF资料下载
参数资料
| 型号： | IRG4PH30 |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
| 中文描述： | 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条） |
| 文件页数： | 2/10页 |
| 文件大小： | 212K |
| 代理商： | IRG4PH30 |
IRG4PH30KD
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
53
—
9.0
—
21
—
39
—
84
—
220
—
90
—
0.95
—
1.15
—
2.10
10
—
Conditions
80
14
32
—
—
340
140
—
—
2.6
—
I
C
= 10A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25
°
C
I
C
= 10A, V
CC
= 800V
V
GE
= 15V, R
G
= 23
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
CC
= 720V, T
J
= 125
°
C
V
GE
= 15V, R
G
= 5.0
T
J
= 150
°
C, See Fig. 10,11,18
I
C
= 10A, V
CC
= 800V
V
GE
= 15V, R
G
= 23
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 14 I
F
= 10A
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 15 V
R
= 200V
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 16 di/dt = 200A/μs
T
J
= 25
°
C See Fig.
T
J
= 125
°
C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
42
79
540
97
3.5
13
800
60
14
50
72
4.4
5.9
130
250
210
180
—
—
—
—
—
—
—
—
—
76
110
7.0
8.8
200
380
—
—
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
0.19
—
3.10
—
3.90
—
3.01
3.0
—
—
-12
4.3
6.5
—
—
—
—
—
3.4
—
3.3
—
—
Conditions
—
—
4.2
—
—
6.0
—
—
250
3500
3.8
3.7
±100
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 10A
I
C
= 20A
I
C
= 10A, T
J
= 150
°
C
V
CE
= V
GE
, I
C
= 250μA
mV/
°
C V
CE
= V
GE
, I
C
= 250μA
S
V
CE
= 100V, I
C
= 10A
μA
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150
°
C
V
I
C
= 10A
I
C
= 10A, T
J
= 150
°
C
nA
V
GE
= ±20V
V/
°
C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25
°
C (unless otherwise specified)
相关PDF资料 |
PDF描述 |
|---|---|
| IRG4PH30K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) |
| IRG4PH30KPBF | INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT |
| IRG4PH40KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A) |
| IRG4PH40UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) |
| IRG4PH40KPBF | Short Circuit Rated UltraFast IGBT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IRG4PH30K | 功能描述:IGBT UFAST 1200V 20A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4PH30KD | 功能描述:IGBT W/DIODE 1200V 20A TO-247AC RoHS:否 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRG4PH30KDPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH30KPBF | 功能描述:IGBT 晶体管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRG4PH40FD | 制造商:International Rectifier 功能描述:1200V 29.000A COPAK 247 / IGBT : JA / DI |
发布紧急采购，3分钟左右您将得到回复。