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参数资料
| 型号： | IRGB20B60PD1 |
| 厂商： | International Rectifier |
| 英文描述： | SMPS IGBT |
| 中文描述： | 的SMPS IGBT |
| 文件页数： | 2/10页 |
| 文件大小： | 351K |
| 代理商： | IRGB20B60PD1 |
IRGB20B60PD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
R
G
Internal Gate Resistance
2
www.irf.com
Notes:
R
CE(on)
typ. = equivalent on-resistance = V
CE(on)
typ. / I
C
, where V
CE(on)
typ. = 2.05V and I
C
= 13A. I
D
(FET Equivalent) is the equivalent MOSFET I
D
rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 28μH, R
G
= 22
.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
C
oes
eff. is a fixed capacitance that gives the same charging time as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
C
oes
eff.(ER) is a fixed capacitance that stores the same energy as C
oes
while V
CE
is rising from 0 to 80% V
CES
.
Min.
600
—
—
—
—
—
—
3.0
—
—
—
—
—
—
—
Typ.
—
0.32
4.3
2.05
2.50
2.65
3.30
4.0
-11
19
1.0
0.1
1.5
1.4
—
Max. Units Conditions
—
V
V
GE
= 0V, I
C
= 500μA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-125°C)
—
1MHz, Open Collector
2.35
I
C
= 13A, V
GE
= 15V
2.80
V
I
C
= 20A, V
GE
= 15V
3.00
I
C
= 13A, V
GE
= 15V, T
J
= 125°C
3.70
I
C
= 20A, V
GE
= 15V, T
J
= 125°C
5.0
V
I
C
= 250μA
—
mV/°C V
CE
= V
GE
, I
C
= 1.0mA
—
S
V
CE
= 50V, I
C
= 40A, PW = 80μs
250
μA
V
GE
= 0V, V
CE
= 600V
—
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 125°C
1.8
V
I
F
= 4.0A, V
GE
= 0V
1.7
I
F
= 4.0A, V
GE
= 0V, T
J
= 125°C
±100
nA
V
GE
= ±20V, V
CE
= 0V
Ref.Fig
4, 5,6,8,9
V
CE(on)
Collector-to-Emitter Saturation Voltage
V
GE(th)
V
GE(th)
/
TJ
gfe
I
CES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
7,8,9
V
FM
Diode Forward Voltage Drop
10
I
GES
Gate-to-Emitter Leakage Current
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Qg
Total Gate Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
C
oes
eff.
Effective Output Capacitance (Time Related)
C
oes
eff. (ER)
Effective Output Capacitance (Energy Related)
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
68
24
10
95
100
195
20
5.0
115
6.0
165
150
315
19
6.0
125
13
1560
95
20
83
61
Max. Units
102
36
15
140
145
285
26
7.0
135
8.0
215
195
410
25
8.0
140
17
—
—
—
—
—
Ref.Fig
I
C
= 13A
V
CC
= 400V
V
GE
= 15V
I
C
= 13A, V
CC
= 390V
V
GE
= +15V, R
G
= 10
, L = 200μH
T
J
= 25°C
I
C
= 13A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 10
, L = 200μH
T
J
= 25°C
17
nC
CT1
CT3
μJ
CT3
I
C
= 13A, V
CC
= 390V
μJ
V
GE
= +15V, R
G
= 10
, L = 200μH
T
J
= 125°C
I
C
= 13A, V
CC
= 390V
ns
V
GE
= +15V, R
G
= 10
, L = 200μH
T
J
= 125°C
CT3
11,13
WF1,WF2
CT3
12,14
WF1,WF2
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
V
GE
= 0V, V
CE
= 0V to 480V
16
pF
15
T
J
= 150°C, I
C
= 80A
V
CC
= 480V, Vp =600V
Rg = 22
, V
GE
= +15V to 0V
T
J
= 25°C
I
F
= 4.0A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 4.0A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
T
J
= 25°C
I
F
= 4.0A, V
R
= 200V,
T
J
= 125°C
di/dt = 200A/μs
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
t
rr
Diode Reverse Recovery Time
—
—
—
—
—
—
28
38
40
70
2.9
3.7
42
57
60
105
5.2
6.7
ns
19
Q
rr
Diode Reverse Recovery Charge
nC
21
I
rr
Peak Reverse Recovery Current
A
19,20,21,22
CT5
Conditions
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