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参数资料
型号： IRGB4045DPBF
厂商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 绝缘栅双极型晶体管，超快软恢复二极管
文件页数： 2/10页
文件大小： 792K
代理商： IRGB4045DPBF
IRGB4045DPbF
2
www.irf.com
Notes:
V
CC
= 80% (V
CES
), V
GE
= 15V, L = 1.0mH, R
G
= 47
.
Pulse width limited by max. junction temperature.
θ
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units Conditions
600
—
—
V/°C V
GE
= 0V, I
c
= 250μA ( 25 -175
o
C )
I
C
= 6.0A, V
GE
= 15V, T
J
= 25°C
—
2.07
—
V
I
C
= 6.0A, V
GE
= 15V, T
J
= 150°C
Ref.Fig
V
V
GE
= 0V, I
c
=100 μA
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
—
0.36
—
—
1.7
2.0
V
CE(on)
Collector-to-Emitter Saturation Voltage
5,6,7,9,
—
4.0
2.14
—
-13
—
6.5
I
C
= 6.0A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 150μA
mV/°CV
CE
= V
GE
, I
C
= 250μA ( 25 -175
o
C )
V
CE
= 25V, I
C
= 6.0A, PW =80
μ
s
μA
V
GE
= 0V,V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
=175°C
I
F
= 6.0A
10 ,11
V
GE(th)
Gate Threshold Voltage
V
V
GE(th)
/
TJ
gfe
I
CES
Threshold Voltage temp. coefficient
—
—
Forward Transconductance
—
—
5.8
—
—
25
S
—
—
—
1.60
250
2.30
8
V
FM
V
—
—
1.30
—
—
I
F
= 6.0A, T
J
= 175°C
V
GE
= ± 20 V
I
GES
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate-to-Emitter Charge (turn-on)
Q
gc
Gate-to-Collector Charge (turn-on)
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
total
Total Switching Loss
t
d(on)
Turn-On delay time
t
r
Rise time
t
d(off)
Turn-Off delay time
t
f
Fall time
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
Min. Typ. Max. Units
—
13
Ref.Fig
19.5
I
C
= 6.0A
V
CC
= 400V
V
GE
= 15V
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
R
G
= 47
, L=1mH, L
S
= 150nH, T
J
= 25°C
24
—
3.1
4.65
nC
CT1
—
6.4
9.6
86
—
56
—
122
178
143
μJ
CT4
—
229
Energy losses include tail and diode reverse recovery
—
27
35
I
C
= 6.0A, V
CC
= 400V
ns
R
G
= 47
, L=1mH, L
S
= 150nH
T
J
= 25°C
—
11
15
CT4
—
75
93
—
17
22
—
140
—
I
C
= 6.0A, V
CC
= 400V, V
GE
= 15V
μJ
R
G
= 47
, L=1mH, L
S
= 150nH, T
J
= 175°C
13,15
—
189
329
—
CT4
—
—
Energy losses include tail and diode reverse recovery
WF1,WF2
—
26
—
I
C
= 6.0A, V
CC
= 400V
ns
R
G
= 47
, L=1mH, L
S
= 150nH
T
J
= 175°C
14,16
—
12
—
CT4
—
95
—
WF1,WF2
—
32
—
—
350
—
V
GE
= 0V
V
CC
= 30V
f = 1Mhz
T
J
= 175°C, I
C
= 20A
V
CC
= 500V, Vp =600V
R
G
= 100
, V
GE
= +15V to 0V
V
CC
= 400V, Vp =600V
R
G
= 100
, V
GE
= +15V to 0V
T
J
= 175
o
C
V
CC
= 400V, I
F
= 6.0A
V
GE
= 15V, Rg = 47
, L=1mH, L
S
=150nH
23
—
29
—
—
10
—
4
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
CT2
22, CT3
WF4
Erec
Reverse recovery energy of the diode
—
178
—
μJ
17,18,19
trr
Irr
Diode Reverse recovery time
—
—
74
—
—
ns
20,21
Peak Reverse Recovery Current
12
A
WF3
—
Diode Forward Voltage Drop
Collector-to-Emitter Leakage Current
SCSOA
Short Circuit Safe Operating Area
5
—
μs
pF
CT6
9,10,11,12
Conditions
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