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参数资料
| 型号： | IRGI4085PBF |
| 厂商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等离子沟道IGBT |
| 文件页数： | 2/7页 |
| 文件大小： | 778K |
| 代理商： | IRGI4085PBF |
2
www.irf.com
Half sine wave with duty cycle = 0.10, ton=2μsec.
R
θ
is measured at
Pulse width
≤
400μs; duty cycle
≤
2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
Β
V
CES
/
T
J
Breakdown Voltage Temp. Coefficient
Min.
330
30
–––
–––
–––
Typ.
–––
–––
0.31
1.05
1.21
1.35
1.68
2.23
1.90
–––
-10
2.0
5.0
100
–––
–––
51
84
30
48
37
180
102
45
38
234
185
–––
Max. Units
–––
–––
–––
–––
1.50
–––
–––
–––
–––
5.0
–––
25
–––
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
V
V/°C
V
–––
–––
–––
2.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
V
GE(th)
V
GE(th)
/
T
J
I
CES
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
V
mV/°C
μA
I
GES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
nA
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
S
nC
I
C
= 25A, V
CC
= 196V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 25°C
I
C
= 25A, V
CC
= 196V
ns
R
G
= 10
, L=200μH, L
S
= 150nH
T
J
= 150°C
ns
E
PULSE
Energy per Pulse
μJ
C
ies
C
oes
C
res
L
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
–––
–––
2287
141
73
5.0
–––
–––
–––
–––
pF
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
L
E
Internal Emitter Inductance
–––
13
–––
V
CE
= 30V
= 1.0MHz, See Fig.13
V
GE
= 0V
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 25°C
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
,
T
J
= 100°C
Conditions
V
GE
= 0V, I
CE
= 1 mA
V
GE
= 0V, I
CE
= 1 A
Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 15A
V
GE
= 15V, I
CE
= 28A
V
GE
= 15V, I
CE
= 40A
V
GE
= 15V, I
CE
= 70A
V
GE
= 15V, I
CE
= 120A
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 500μA
V
CE
= 330V, V
GE
= 0V
V
CE
= 330V, V
GE
= 0V, T
J
= 100°C
V
CE
= 330V, V
GE
= 0V, T
J
= 150°C
V
GE
= 30V
V
GE
= -30V
–––
977
–––
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
–––
854
–––
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1
Static Collector-to-Emitter Voltage
V
CE(on)
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