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参数资料
| 型号： | IRGP20B120UD-E |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 1/12页 |
| 文件大小： | 148K |
| 代理商： | IRGP20B120UD-E |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast Non Punch Through (NPT)
Technology
Low Diode V
F
(1.67V Typical @ 20A & 25°C)
10
μ
s Short Circuit Capability
Square RBSOA
UltraSoft Diode Recovery Characteristics
Positive V
CE(on)
Temperature Coefficient
Extended Lead TO-247AD Package
Benefits
Benchmark Efficiency Above 20KHz
Optimized for Welding, UPS, and Induction Heating
Applications
Rugged with UltraFast Performance
Low EMI
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation
Longer Leads for Easier Mounting
Absolute Maximum Ratings
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
(Fig.24)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
W
t
Z
θ
JC
www.irf.com
°C/W
g (oz)
12/14/99
E
G
C
IRGP20B120UD-E
UltraFast CoPack IGBT
PD- 93817
TO-247AD
N-channel
1
V
CES
= 1200V
V
CE(on) typ.
= 3.05V
V
GE
= 15V, I
C
= 20A, 25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
1200
40
20
120
120
20
120
± 20
300
120
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGP20B120UD-EP | 功能描述:IGBT 晶体管 1200V ULTRAFAST 5-40 KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP20B120UD-EP | 制造商:International Rectifier 功能描述:; MOUNTING TYPE:THROUGH HOLE; PACKAGE/CA |
| IRGP20B120U-E | 制造商:International Rectifier 功能描述:SINGLE IGBT, 1.2KV, 40A, Transistor Type:IGBT, DC Collector Current:40A, Collect |
| IRGP20B120U-EP | 功能描述:IGBT 晶体管 1200V UltraFast 5-40kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP20B60PD | 制造商:INTRSL 功能描述: |
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