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参数资料
| 型号： | IRGP20B120UD-E |
| 厂商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 绝缘栅双极型晶体管，超快软恢复二极管 |
| 文件页数： | 2/12页 |
| 文件大小： | 148K |
| 代理商： | IRGP20B120UD-E |
IRGP20B120UD-E
2
www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
Tj
Temperature Coeff. of Breakdown Voltage
Min.
1200
Typ.
Max. Units
Conditions
Fig.
V
V
GE
= 0V,I
c
=250 μA
V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
I
C
= 20A, V
GE
= 15V
I
C
= 25A, V
GE
= 15V
+1.2
3.05
3.37
4.23
3.89
4.31
5.0
- 1.2
15.7
V/°C
3.45
3.80
4.85
4.50
5.06
6.0
5, 6
Collector-to-Emitter Saturation
7, 9
V
CE(on)
Voltage
V
I
C
= 40A, V
GE
= 15V
I
C
= 20A, V
GE
= 15V, T
J
= 125°C
10
11
I
C
= 25A, V
GE
= 15V, T
J
= 125°C
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 1 mA (25 -125
o
C)
V
CE
= 50V, I
C
= 20A, PW =80μs
V
GE(th)
V
GE(th)
/
Tj
Gate Threshold Voltage
4.0
V
9,10,11,12
Temperature Coeff. of Threshold Voltage
mV/
o
C
S
g
fe
Forward Transconductance
13.6
17.8
250
750
2200
1.96
2.06
2.03
2.18
±100
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
=125°C
I
CES
Zero Gate Voltage Collector Current
420
1482
1.67
1.76
1.73
1.87
μA
V
GE
= 0V, V
CE
= 1200V, T
J
=150°C
I
C
= 20A
V
FM
Diode Forward Voltage Drop
V
I
C
= 25A
I
C
= 20A, T
J
= 125°C
8
I
C
= 25A, T
J
= 125°C
V
GE
= ±20V
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Min.
Typ.
169
24
82
850
425
Max. Units
254
36
126
1050
650
Conditions
Fig.
I
C
= 20A
V
CC
= 600V
23
nC
CT1
Q
gc
E
on
Gate - Collector Charge (turn-on)
V
GE
= 15V
I
C
= 20A, V
CC
= 600V
V
GE
= 15V, Rg = 5
,
L = 200μH
T
J
= 25
o
C, Energy losses include tail
and diode reverse recovery
Ic = 20A, V
CC
= 600V
V
GE
= 15V, Rg = 5
,
L = 200μH
T
J
= 125
o
C, Energy losses include tail
and diode reverse recovery
Ic = 20A, V
CC
= 600V
V
GE
= 15V, Rg = 5
,
L = 200μH
o
C
Turn-On Switching Loss
CT4
E
off
Turn-Off Switching Loss
μJ
WF1
E
tot
Total Switching Loss
1275
1800
WF2
E
on
E
off
Turn-on Switching Loss
1350
610
1550
875
13, 15
Turn-off Switching Loss
μJ
CT4
E
tot
Total Switching Loss
1960
2425
WF1 & 2
td(on)
Turn - on delay time
50
20
204
24
2200
210
85
65
30
230
35
14, 16
tr
Rise time
ns
CT4
td(off)
tf
Turn - off delay time
T
J
= 125
WF1
Fall time
WF2
C
ies
C
oes
Input Capacitance
V
GE
= 0V
V
CC
= 30V
Output Capacitance
pF
22
C
res
Reverse Transfer Capacitance
f = 1.0 MHz
T
J
= 150
V
CC
= 1000V, V
P
= 1200V
Rg = 5
, V
GE
= +15V to 0V
o
C, Ic = 120A
4
RBSOA
Reverse bias safe operating area
FULL SQUARE
CT2
T
J
= 150
V
CC
= 900V, V
P
= 1200V
Rg = 5
, V
GE
= +15V to 0V
o
C
CT3
SCSOA
Short Circuit Safe Operating Area
10
----
----
μs
WF4
E
rec
Reverse recovery energy of the diode
1600
300
32
13
2100
μJ
ns
A
nH
T
J
= 125
V
CC
= 600V, Ic = 20A
V
GE
= 15V, Rg = 5
,
L = 200μH
Measured 5 mm from the package.
o
C
17,18,19
trr
Irr
Diode Reverse recovery time
20, 21
Peak Reverse Recovery Current
36
CT4, WF3
Le
Internal Emitter Inductance
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