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参数资料
| 型号： | IRGP4050 |
| 厂商： | International Rectifier |
| 英文描述： | PDP Switch |
| 中文描述： | 等离子开关 |
| 文件页数： | 1/8页 |
| 文件大小： | 282K |
| 代理商： | IRGP4050 |
IRGP4050
PDP Switch
E
C
G
n-channel
=
1
www.irf.com
PD-95882
Features
Key parameters optimized for PDP sustain &
Energy recovery applications
104A continuous collector current
rating reduces component count
High pulse current rating makes it ideal for
capacitive load circuits
Low temperature co-efficient of V
CE (ON)
ensures
reduced power dissipation at operating junction
temperatures
Reverse voltage avalanche rating improves the
robustness in sustain driver application
Short fall & rise times for fast switching
This IGBT is specifically designed for sustain & energy recovery application
in plasma display panels. This IGBT features low V
CE (ON)
and fast switching
times to improve circuit efficiency and reliability. Low temperature co-efficient
of V
CE (ON)
makes this IGBT an ideal device for PDP sustain driver application.
TO-247AC
*Package limited to 60A.
Absolute Maximum Ratings
Parameter
Max.
250
104*
56
208
290
±20
1240
330
130
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Solder Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
0.24
–––
6 (0.21)
Max.
0.38
–––
40
–––
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
g (oz.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IRGP4050PBF | 功能描述:IGBT 晶体管 250V Plasma Display Panel IGBT Switch RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4055DPBF | 功能描述:IGBT PDP N-CH 300V TO-247AC RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:- 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| IRGP4055PBF | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 110A 3PIN TO-247AC - Bulk |
| IRGP4062D-EPBF | 功能描述:IGBT 晶体管 600V UltraFast IGBT 5uS 24A 1.65 VCE RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IRGP4062DPBF | 功能描述:IGBT 晶体管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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